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mr-NIL200 series
Nanoimprint Resists
Dry etch mask
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Photo-curable NIL resist
mr-NIL200 is a photo-curable NIL resist specifically for applying hard and non-permeable stamp materials. The typical application field of mr-NIL200 is the use as an etch mask in pattern transfer processes for e.g. photonic applications. mr-NIL200 works without the need for any additional adhesion promoter or primer.
Unique Features
  • No need for additional adhesion promoter or primer proved on different substrates (Si, SiO2, Al, sapphire, Cu, different underlayer materials like LOR, UL1, UL3)
  • Can be cured under ambient conditions in the presence of air
  • Low viscosity renders fast cavitity filling and minimize propensity for air bubble defects
Application Examples

Step-and-repeat nanoimprint on pre-spin coated film for the fabrication of integrated optical devices
G Calafiore et al., J. Micro/Nanolith. MEMS MOEMS 14(3), 033506 Link to Abstract

Efficient fabrication of photonic and optical patterns by imprinting the tailored photo-curable NIL resist «mr-NIL200»
M Messerschmidt et al., Poster, International Conference on Micro & Nano Engineering MNE2018, Copenhagen Link to Poster

UV-NIL

Resist Film Thickness [nm]
spin coating @ 3000 rpm		 Recommended working stamp material Special Feature
mr-NIL200-100nm 100 non-porous No primer required, r.t. process
mr-NIL200-200nm 200
mr-NIL200-300nm 300

Film thickness and packages size

Specifications Film thickness and packages sizes
Ready to use solutions for standard film thickness (3000 rpm) mr-NIL200-100 nm
mr-NIL200-200 nm
mr-NIL200-300 nm
Customized film thickness upon request between (3000 rpm) 1 µm
Availalbe resist quantities 250 ml
500 ml
Larger volumes on request

Recommended process chemicals:

Thinner: mr-T 1078
Primer: Not needed
(mr-APS1 for mr-NIL200 film thickness > 300nm)
Omnicoat (Kayaku Advanced Materials)

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mr-NIL210 series
Nanoimprint Resists
Dry etch mask
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Photo-curable NIL-Resist
mr-NIL210 is a purely organic, photo-curable NIL resist with oustanding dry etch characteristics. It features an excellent curing and nanoimprint performance and is particularly suitable for soft-NIL using soft stamp materials, e.g. PDMS.
Unique Features
  • Excellent curing properties, even under air (presence of oxygen)
  • Compatibility to PDMS working stamps for soft-NIL, preferably applied in combination with UV-PDMS KER-4690 
  • Outstanding dry etch stability against various substrates like silicon, quartz, or aluminum
  • Purely organic resist, residue-free removable with oxygen plasma possible after curing
Applications
  • Etch mask for pattern transfer processes (dry and wet etching)
  • Fabrication of nanostructures for
    • LEDs, photonic crystals
    • Patterned sapphire substrates (PSS)
    • Microelectronics
    • Organic electronics (OLED, OPV, OTFT)
    • Data storage (bit patterned media)
    • Lift-off applications in combination with  e.g. LOR (MCC, USA)

UV-NIL

Resist Film Thickness [nm]
spin coating @ 3000 rpm		 Recommended working stamp material Special Feature
mr-NIL210-100nm 100 porous soft stamp (e.g. PDMS) Excellent film stability, r.t. process
mr-NIL210-200nm 200
mr-NIL210-500nm 500

Our standard film thicknesses

mr-NIL210 Version Film thickness @3000 rpm*
mr-NIL210-100nm 100 nm
mr-NIL210-200nm 200 nm
mr-NIL210-500nm 500 nm

* Customized film thickness available on request up to 12.5 µm

Recommended process chemicals:

Thinner: mr-T 1078
Primer: mr-APS1, Omnicoat (Kayaku Advanced Materials)

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mr-NIL212FC series
Nanoimprint Resists
Dry etch mask
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Photo-curable NIL-Resist
mr-NIL212FC is a purely organic, photo-curable NIL resist with oustanding dry etch characteristics. It features an excellent curing and nanoimprint performance and is particularly suitable for soft-NIL using soft stamp materials, e.g. PDMS. mr-NIL212FC features a strongly increased etching stability in RIE processes compared to mr-NIL210.
Unique Features
  • Excellent structure stability due to the integrated FC-technology (fast curing) for sub-100nm-structures
  • Perfect curing characteristics in combination with low power light exposure sources (e.g. standard mask aligners)
  • Compatibility to PDMS working stamps for soft-NIL, preferably applied in combination with UV-PDMS KER-4690 
  • Provides superior etching selectivity compared to mr-NIL210 in RIE processes
  • Purely organic resist, residue-free removable with oxygen plasma possible after curing
  • Etch mask for pattern transfer processes (dry and wet etching)
  • Fabrication of nanostructures for
    • LEDs, photonic crystals
    • Patterned sapphire substrates (PSS)
    • Microelectronics
    • Organic electronics (OLED, OPV, OTFT)
    • Data storage (bit patterned media)
    • Lift-off applications in combination with  e.g. LOR (KAM, USA)

UV-NIL

Resist Film Thickness [nm]
spin coating @ 3000 rpm		 Recommended working stamp material Special Feature
mr-NIL212FC-100nm 100 porous soft stamp (e.g. PDMS) Excellent film stability, r.t. process
mr-NIL212FC-200nm 200
mr-NIL212FC-300nm 300

Our standard film thicknesses

mr-NIL212FC version Film thickness @3000 rpm*
mr-NIL212FC-100nm 100 nm
mr-NIL212FC-200nm 200 nm
mr-NIL212FC-300nm 300 nm

* Customized film thickness available upon request

Recommended process chemicals:

Thinner: mr-T 1050

Primer: mr-APS1, OmniCoat (Kayaku Advanced Materials)

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mr-XNIL26SF
Nanoimprint Resists
Dry etch mask
Element 23weqwf
Element 25weqwf
Photo-curable NIL resist, solvent-free
Photo-curable NIL resist featuring high content of fluorinated components
Unique Features
  • high content of fluorinated components for easy stamp release and low defectivity
  • 100% organic, easy strippable with oxygen plasma
  • Can be diluted to 100nm film thickness using PGMEA or ma-T 1050
  • Low refractive index of cured material (RI = 1.40)
Applications
  • NIL applications where comparably low release forces are essential (e.g. imprints on top of a multilayer stack)

UV-NIL

Resist Film Thickness [nm]
spin coating @ 3000 rpm		 Recommended working stamp material Special Feature
mr-XNIL26SF 4.8 non-porous High fluorine content, low release forces, r.t. process, low RI, solvent-free
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mr-I T85 series
Nanoimprint Resists
Bio-Applications, Lab-on-Chip
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Non-polar thermoplastic NIL Resist
T-NIL resist (Tg = 85 °C) based on non-polar cyclo-olefin-copolymers (TOPAS)
Unique Features
  • Film thickness of up to 5 µm possible for the fabrication of microfluidic or lab-on-chip devices
  • 100% organic thermoplast → dry etching and stripping possible with pure oxygen plasma
  • featuring the highest optical transparency in the range of UV/vis and distinctive chemical stability against e.g. different solvents, acids, and bases
Applications

Lab-on-chip systems

  • Bio applications
  • Microfluidics
  • Microoptical elements
  • Wave guides
  • Single and multilayer systems
  • Mask for pattern transfer processes

T-NIL

Resist Film Thickness [nm]
spin coating @ 3000 rpm		 GGlass transition temperature Tg [°C] Special Feature
mr-I T85-0.3 300 85 high chemical and optical stability, high transparency
mr-I T85-1.0 1000
mr-I T85-5.0 5000

 

Material characteristics and imprint parameters mr-I T85
Glass transition temperature Tg 85 °C
Imprint temperature 130 – 150 °C
PImprint pressure 5 – 20 bar
Ready-to-use solutions for various film thicknesses (3000 rpm) * mr-I T85-0.3 300 nm

mr-I T85-1.0 1.0 µm

mr-I T85-5.0 5.0 µm
Resist removal Oxygen plasma

* Customized film thickness up to 20 µm available on request

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mr-I 7000R series
Nanoimprint Resists
Dry etch mask
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Element 25weqwf
Thermoplastic NIL resist
T-NIL resist featuring low glass transition temperature (Tg = 55 °C) for low temperature imprints
Unique Features
  • Facilitated stamp separation due to integrated fluorinated additive
  • 100% organic thermoplast → dry etching and stripping possible with pure oxygen plasma
  • Polymer soluble in aceton and other common solvents → easy cleaning
  • mr-I 7000R contains a fluorinated additive for lowering the release force during stamp detachment. The additive-free basic imprint polymer mr-I 7000E is available on request.
Applications

Fabrication of nanopatterns by pattern transfer for e.g

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
  • Microfluidics, bio applications
  • Single layer lift-off

T-NIL

Resist Film Thickness [nm]
spin coating @ 3000 rpm		 Glass transition temperature Tg [°C] Special Feature
mr-I 7010R 100 55 Low Tg, high etching selectivity
mr-I 7020R 200
mr-I 7030R 300

 

Parameter mr-I 7000R mr-I 8000R
Glass transition temperature Tg 55 °C 115 °C
Imprint temperature 120 °C - 140 °C 150 °C - 180 °C
Imprint pressure 5 – 10 bar 20 - 40 bar
Ready-to-use solutions for standard film thicknesses *(3000 rpm) mr-I 7010R 100nm

mr-I 7020R 200nm

mr-I 7030R 300nm

 mr-I 8010R 100nm

mr-I 8020R 200nm

mr-I 8030R 300nm
Resist thinner ma-T 1050 ma-T 1050
Resist stripping ma-T 1050, aceton, org. solvents or oxygen plasma ma-T 1050, aceton, org. solvents or oxygen plasma

* Customized film thickness up to 5 µm available on request

Recommended process chemicals:

Thinner: ma-T 1050
Remover: ma-T 1050, aceton, org. solvents or oxygen plasma

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mr-I 8000R series
Nanoimprint Resists
Dry etch mask
Element 23weqwf
Element 25weqwf
Thermoplastic NIL resist
T-NIL resist featuring higher glass transition temperature (Tg = 115 °C) for increased pattern stability in subsequent processes
Unique Features
  • Facilitated stamp separation due to integrated fluorinated additive
  • 100% organic thermoplast → dry etching and stripping possible with pure oxygen plasma
  • Polymer soluble in aceton and other common solvents → easy cleaning
  • mr-I 8000R contains a fluorinated additive for lowering the release force during stamp detachment. The additive-free basic imprint polymer mr-I 8000E is available on request.
Applications

Fabrication of nanopatterns by pattern transfer for e.g.

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
  • Microfluidics, bio applications
  • Single layer lift-off

T-NIL

Resist Film Thickness [nm]
spin coating @ 3000 rpm		 Glass transition temperature Tg [°C] Special Feature
mr-I 8010R 100 115 High Tg, high etching selectivity
mr-I 8020R 200
mr-I 8030R 300

 

Parameter mr-I 7000R mr-I 8000R
Glass transition temperature Tg 50 °C 105 °C
Imprint temperature 120 °C - 140 °C 150 °C - 180 °C
Imprint pressure 5 - 10 bar 20 - 40 bar
Ready-to-use solutions for standard film thicknesses * (3000 U/min) mr-I 7010R 100nm

mr-I 7020R 200nm

mr-I 7030R 300nm

 mr-I 8010R 100nm

mr-I 8020R 200nm

mr-I 8030R 300nm
Resist thinner ma-T 1050 ma-T 1050
Resist stripping ma-T 1050, aceton, org. solvents or oxygen plasma ma-T 1050, aceton, org. solvents or oxygen plasma

* Customized film thickness up to 1 µm available on request

Recommended process chemicals:

Thinner: ma-T 1050
Remover: ma-T 1050, aceton, org. solvents or oxygen plasma

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mr-I 9000M series
Nanoimprint Resists
Dry etch mask, permanent nanostructures
Element 23weqwf
Element 25weqwf
Thermoset
Thermally curable NIL resist (Thermoset - no Tg after imprinting)
Unique Features
  • Excellent thermal structure stability (up to 250 °C in a two-step imprinting process) in subsequent processes due to the thermally induced crosslinking reaction during imprinting
  • 100% organic resist → dry etching and stripping possible with pure oxygen plasma
Applications

Fabrication of nanopatterns by pattern transfer for e.g.

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements

T-NIL

Resist Film Thickness [nm]
spin coating @ 3000 rpm		 Glass transition temperature Tg [°C] Special Feature
mr-I 9010M 100 35 Thermoset material, will cure during imprinting, outperforms in terms of dry etching stability
mr-I 9020M 200
mr-I 9030M 300
mr-I 9050M 500
mr-I 9100M 1000

 

mr-I 9000M version * Film thickness *
mr-I 9010M 100 nm
mr-I 9020M 200 nm
mr-I 9030M 300 nm
mr-I 9050M 500 nm
mr-I 9100M 1.0 µm

* Customized film thickness up to 3 µm available on request

– Larger containers and quantities available on request

Recommended process chemicals:

Thinner: ma-T 1045
Remover: ma-T 1045, Oxygen plasma

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mr-NIL 6000E series
Nanoimprint Resists
Dry etch mask
Element 23weqwf
Element 25weqwf
Photo-curable thermoplastic NIL resist
mr-NIL 6000E is a photo-curable thermoplastic NIL resist featuring after imprinting and exposure an excellent pattern stability in subsequent processes with a thermal load (e.g. RIE)
Unique Features
  • Excellent thermal structure stability in subsequent processes due to the photochemically induced crosslinking reaction during imprinting
  • 100% organic NIL resist → dry etching and stripping possible with pure oxygen plasma
Applications
  • Fabrication of nanopatterns by pattern transfer for e.g.
  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements

UV-NIL

Resist Film Thickness [nm]
spin coating @ 3000 rpm		 Recommended working stamp material Special Feature
mr-NIL 6000.1E 100 all stamp materials No primer required, epoxy stystem, imprint at 70°C
mr-NIL 6000.2E 200
mr-NIL 6000.3E 300

 

mr-NIL 6000E version Film thickness *
mr-NIL 6000.1E 100 nm
mr-NIL 6000.2E 200 nm
mr-NIL 6000.3E 300 nm

* Customized film thickness up to 6 µm available on request

Recommended process chemicals:

Thinner: ma-T 1045

 

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SIPOL series
Nanoimprint Resists
Dry etch mask for a large aspect ratio
Element 23weqwf
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Silicon containing thermoplastic NIL resist
T-NIL resist (Tg = 63 °C) with a 10% content of covalently bonded Silicon acting as an etch mask in a bilayer approach for the realization of very high aspect ratio patterns after subsequent dry etch processes
Unique Features

Material deposition on top of underlayer UL1 using spin-coating technique

  • High oxygen plasma resistance due to a Si content of 10 %
  • Good stamp release characteristics give rise to a low defectivity rate
Applications
  • Fabrication of micro/nano-scale patterns with high aspect ratios >> 3
  • Patterned sapphire substrates (PSS) for fabrication of high brightness LEDs
  • Micro/nanopillars for nanofluidic devices, e.g. DNA electrophoresis
  • Fabrication of photonic crystals

T-NIL

Resist Film Thickness [nm]
spin coating @ 3000 rpm		 GGlass transition temperature Tg [°C] Special Feature
SIPOL-60nm 60 63 Siliziumhaltiger Resist, kann im Doppelschicht-Ansatz eine in-situ SiO2-Hartmaske bilden
SIPOL-100nm 100
SIPOL-200nm 200

Our available products with standard film thickness

SIPOL version* SIPOL film thickness *
SIPOL-100nm 100nm
SIPOL-200nm 200nm

* Customized film thickness up to 1.5 µm available on request

Recommended process chemicals:

Thinner: ma-T 1050
Remover: ma-T 1050, Aceton, aceton, org. solvents
Transfer layer: UL1 series

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mr-I PMMA35k series
Nanoimprint Resists
Element 23weqwf
Element 25weqwf
Thermoplastic NIL resist
T-NIL resist (Tg = 105 °C) for fundametal NIL investigations
Unique Features
  • Good imprint behavior
  • Easy cleaning with conventional solvents
Applications
  • Basic investigations

T-NIL

Resist Film Thickness [nm]
spin coating @ 3000 rpm		 Glass transition temperature Tg [°C] Special Feature
mr-I PMMA35k-100nm 100 105 Process evaluation
mr-I PMMA35k-300nm 300
mr-I PMMA35k-500nm 500

 

mr-PMMA version Film thickness *
mr-I PMMA35k-100nm 100 nm
mr-I PMMA35k-300nm 300 nm
mr-I PMMA35k-500nm 500 nm

* Customized film thickness available on request

Recommended process chemicals:

Thinner: ma-T 1050

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UV-curable liquid silicone rubber / UV-PDMS
Nanoimprint Resists
Soft working stamp
Element 23weqwf
Element 25weqwf
Distribution for european markets now

micro resist technology GmbH is providing a new selection of UV-curable liquid silicone rubber / UV-PDMS (OEM:Shin-Etsu) for European markets. The UV-PDMS can be used in a wide range of applications, but in particular for the manufacture of soft-molds in replication technologies such as nanoimprint lithography.

 

There are two different types of UV-PDMS available. The following table provides the general material characteristics of the two different types of UV-PDMS:

General material characteristics of the new UV-PDMS (OEM:Shin-Etsu)

Main advantages by using the new Shin-Etsu UV-PDMS over generic PDMS:

  • Spin-coating for enhanced mold fabrication
  • Faster curing time (e.g. 10 min after UV exposure)
  • High resolution capabilities down 100 nm and smaller
  • 0.02% shrinkage for superb pattern fidelity
KER-4690 (X-34-4184) KER-4691 (X-34-4208)
Appearance (Color Tone) Colorless Milky-white
Appearance (Transparency) Transparent Semitransparent
Viscosity [Pa・s] 2.7 110
Hardness: Durometer type-A 55 42
Elongation at Break [%] 110 400
Tensile Strength [MPa] 7.7 7.0
Tear Propagation Strength (crescent)
[kN/m]		 3.0 17.1
Linear Contraction [%] <0.1 <0.1
Curing Rate* [Min] 20 45
Curing Condition [mJ/cm2] 2000 2000

* TA Instruments ARES-G2, 25℃, 1Hz

Each system consists of two components. After thoroughly mixing the two-component material system (A/B) in equal volume, the liquid mixture compounds can be processed for up to 24 hours by casting, spin-coating or other deposition methods. Due to the photo-sensitivity, the cross-linking (or curing) is initiated by UV-exposure. In contrast to generic PDMS, this allows almost full curing already at room temperature and significantly increases the curing speed (by factor of 100 and more). Furthermore, without the need of an additional thermal curing one can achieve a minimized shrinkage of 0.02%.

 

For detailed information on material properties and process specifications, please get in contact with the unit manager NIL polymers Dr. Mirko Lohse (m.lohse@microresist.de). In case of inquiry request or purchase order, please contact our sales assistant Mrs. Anja Hinz (a.hinz@microresist.de).

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mr-UVCur26SF
Nanoimprint Resists
Inkjet Materials
Dry etch mask, permanent nanostructures
Element 23weqwf
Element 25weqwf
Photo-curable NIL-Resist
mr-UVCur26SF is a pure organic and solvent-free Photo-NIL resist developed for inkjet dispensing. The low viscosity and the fast photo-curing reaction makes mr-UVCur26SF suitable for continuous roll-to-roll NIL processes.
Unique Features
  • Inkjet dispensing at room temperature due to low viscosity (15 mPas), e.g. for step-and-repeat NIL processes
  • No prebake after substrate coating due to solvent-free resist formulation
  • Very fast curing for high throughput R2R-NIL, web speed up to 30 m/min shown
  • Good adhesion to PC and PET substrates
  • Excellent dry etch stability for pattern transfer processes
  • Residue-free removable with oxygen plasma
Applications
  • Etch mask for pattern transfer processes (dry and wet etching)
  • Application of  nanostructures on polymer foils
  • Fabrication of nanostructures for
    • Nano-optical devices, SOEs
    • Organic electronics (OLED, OPV, OTFT)
    • Microelectronics
    • LEDs, photonic crystals
Material Viscosity

[mPas]

 Oxygen insensitive curing Refractive index (589 nm) after curing Temperature stability after curing Suggested applications
mr-UVCur26SF 15 ± 2

(lösungsmittelfrei)

 Yes 1.518 up to 180 °C Etch mask, Step & Repeat NIL processes, large-area structuring of flexible substrates
Alternative Inkjet materials:
InkEpo Serie 5 ± 0.3

8 ± 0.5

12 ± 1

25 ± 1

 No 1.555 up to 180 °C Permanent optical applications (e.g. microlenses, waveguides)
InkOrmo Serie 7 ± 1

12 ± 1.5

18 ± 2

 No 1.517 – 1.520 up to 270 °C Permanent optical applications (e.g. microlenses)
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If necessary, please also use the general contact on our website – we will get back to you as soon as possible!

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Negative Photoresists

Photoresists for UV (mask aligner, laser)/ DUV and e-beam lithography

  • Effective for broadband and i-line, Deep UV, e-beam exposure, or laser direct writing @ 405 nm
  • Lift-off resists with tunable pattern profile, high temperature stability up to 160 °C
  • Variety of viscosities for different film thicknesses in one spin-coating step
     
  • For pattern transfer: Physical vapour deposition (PVD) and single  layer lift-off, etch mask, mould for electroplating
  • For permanent applications: Polymeric waveguides
  • Use in microsystems technology, microelectronics, micro-optics  – manufacture of e.g. LEDs, ICs, MEMS, flat panel displays, fiber optics telecommunications devices
View all Negativ Photoresists
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Positive Photoresists

Positive Photoresists for UV lithography (mask aligner, laser, greyscale exposure) and e-beam lithography

  • Variety of viscosities for 0.1 µm – 60 µm film thickness in one spin-coating step
  • Effective for broadband, g-line, h-line or i-line exposure, laser direct writing at 350…450 nm and e-beam lithography
  • No post exposure bake
  • Easy removal
     
  • For pattern transfer: Etch mask, mould for electroplating, mould for UV moulding
  • Use in microsystems technology, microelectronics, micro-optics – manufacture of e.g. MEMS, LEDs, ICs, MOEMS, fiber optics telecommunications devices, flat panel displays
Element 23weqwf

Hybrid Polymers

micro resist technology offers a broad portfolio of UV-curable hybrid polymer products for micro-optical applications. Their excellent optical transparency and high thermal stability makes them perfectly suitable for the production of polymer-based optical components and waveguides. The main fields of application are micro lenses, diffractive optical elements (DOE), gratings, and single-mode or multi-mode waveguides.

OrmoComp®: DE 30 210 075 433; IR 1 091 982 ; TW 100030626; OrmoClear®: DE 30 210 075 434; IR 1 091 359 ; TW 100030628; OrmoStamp®: DE 30 210 075 435; IR 1 092 621 ; TW 100030629; OrmoPrime®: DE 30 210 075 436

Element 23weqwf

Nanoimprint Resists

Nanoimprint Lithography (NIL) is a straight forward, low cost, and high throughput capable technology for the fabrication of nanometer scaled patterns. Main application fields are photonics, next generation electronics, as well as bio- and sensor applications.

micro resist technology GmbH has provided tailor-made resist formulations for nanoimprint lithography (NIL) since 1999. The unique key features of our products are outstanding film forming and imprinting performance beside excellent pattern fidelity and plasma etch stability. Besides our highly innovative material developments in close contact to industrial needs, our strength is the ability to adjust our materials in film thickness as well as addressing certain needs of the specific use cases within the formulation. Our nanoimprint resists are mostly applied as an etch mask for pattern transfer into various substrates, like Si, SiO2, Al or sapphire.

Our portfolio covers materials for the classical thermal NIL (T-NIL), in which a thermoplastic polymer is used, as well as UV-NIL, in which a liquid formulation is photo crosslinked upon photo exposure. With our technological expertise and know-how we are able to find the right material for your process and applications. Please contact us for your technical support!

Element 23weqwf

Functional materials for inkjet-printing

Special designed functional materials from the product groups Hybrid Polymers, Photoresists, and Nanoimprint Polymers for the deposition and alternative patterning using inkjet printing process

  • Available in different viscosities (adjustable)
  • Suitable in commercial inkjet printing devices
  • Focused on high reliability of droplet generation
  • UV-curable formulations

 

  • Usable as a permanent material for optical application (e.g. lenses, wave guides, optical couplers, diffractive elements, …)
  • Packaging material in the micro electronic
  • Deposition / patterning on substrates with surface topography
  • Imprint material for nano-structuring with high dose accuracy
Element 23weqwf

Dry Films

Dry films are ready-to-use polymer films as laminate foil with a high accuracy of the film thickness and excellent adhesion behaviour on various substrates. They are very simple in handling, photo-structurable and both as cut sheets and as roll material available.

  • Available in different film thicknesses
  • UV-crosslinking as negative photoresist
  • Feasibility of high aspect ratios
  • Vertical sidewalls
  • Multi lamination possible – up to 6 layer  complex multi-layer designs
  • High chemical resilience

 

  • Application as permanent material for optical application (e.g. lenses, wave guides …), in micro fluidics
Element 23weqwf

Resist Alliance

micro resist technology is a single entry point for specialty chemicals used in micro and nano manufacturing in Europe. The portfolio of in-house products is complemented by the strategic sales of associated products that are manufactured by our international partners. Here we act as a high-service distributor and offer European medium-sized companies a wide range of complementary products from a single source, which can be used for both established and innovative production and manufacturing processes.

DuPont Electronic Solutions (formerly DOW Electronic Materials / Rohm and Haas Europe Trading ApS)

We offer products for semiconductor technologies, advanced packaging and dry film resists from our partner DuPont, with whom we have been working for more than 20 years.

Kayaku Advanced Materials, Inc. (formerly MicroChem Corp.)

We offer photoresists and specialty chemicals for MEMS and microelectronic applications from our partner Kayaku Advanced Materials, with whom we have been working for more than 20 years.

DJ MicroLaminates, Inc.

We offer dry film resists for MEMS, microfluidics and packaging applications from our partner DJ MicroLaminates, with whom we have been cooperating for over two years.