In general ma-P 1200 positive photoresists withstand strong acids very well. Tests have shown that 2.5 µm thick ma-P 1225 and 7.5 µm thick ma-P 1275, both processed under standard conditions, resist concentrated HCl at 45…50 °C for at least 10 minutes without any problems. No erosion of the resist film is observed.
Concentrated HF is challenging for all photoresists (cf. QUESTION 4).
Also strongly oxidising acids can cause some problems. The resist stability depends on the temperature and composition of the etchant in such cases.
HF etching is a very demanding. HF doesn´t attack the resist. But it can diffuse under the photoresist and lift it from below causing bad adhesion of the resist on the substrate. This is why a film thickness as high as possible should be chosen, and the resist should be hardened (stronger prebake + hardbake). Nevertheless it depends strongly on the HF concentration and the etch time to what extend the photoresist sustains the etching.
In the literature it is mentioned that ma-P 1200 is suitable for etching with buffered HF [*].
[*] A. Pozzato, S. Dal Zilio, G. Fois, D. Vendramin, G. Mistura, M. Belotti, Y. Chen, M. Natali, Microelectronic Eng. 83 (2006), 884-888, doi:10.1016/j.mee.2006.01.012
For lift-off processes a bi-layer resist system can be applied. E.g. LOR (a not photosensitive polymer provided by MicroChem Corp. for various film thicknesses) can be used as bottom layer. In a second step a positive resist e.g. from the ma-P 1200 series is applied as top layer. During the aqueous-alkaline development of the exposed areas of the positive resist film also the LOR film underneath is dissolved. The undercut profile in the bottom layer is adjusted by varying the development time and the prebake conditions for the LOR layer.
For some applications you can do the lift-off with a single-layer resist which does not give an undercut profile. E.g. the use of ma-P 1200 resist without an additional bottom layer would be sufficient – preferably with a somewhat higher film thickness to give sidewalls that can be reached by the stripper. The quality of the edges of the deposited metal layer is slightly worse than in a bi-layer process in this case.
We recommend to apply “Developer Concentrate” by DOW Electronic Materials for developing resists of the ma-P 1200 series on Al and Al containing substrates. You can purchase the developer from our company. The developer is based on metasilicate which practically doesn´t corrode Al.
 W. Schrott, M. Svoboda, Z. Slouka, D. Šnita, Metal electrodes in plastic microfluidic systems, Microelectronic Engineering, 86 (2009), 1340-1342;
ma-P 1275 is used as mould for electroplating Au and Cu structures to be used in plastic microfluidic systems.
 P.W. Leech, G.K. Reeves, A.S. Holland, Reactive ion etching of TiN, TiAlN, CrN and TiCN Films in CF4/O2 and CHF3/O2 Plasmas, Mater. Res. Soc. Symp. Proc. 890 (2006), 0890-Y08-13.1-6;doi: 10.1557/PROC-0890-Y08-13
ma-P 1205 is used as etch mask for plasma etching in the manufacture of stamps for imprint lithography.
 G. Kaltsas, A. Petropoulos, K. Tsougeni, D. N. Pagonis, T. Speliotis, E. Gogolides, A. G. Nassiopoulou, A novel microfabrication technology on organic substrates – Application to a thermal flow sensor, Journal of Physics: Conference Series 92 (2007) 012046; doi:10.1088/1742-6596/92/1/012046
ma-P 1275 is used in a lift-off process with Pt deposition in the manufacture of a thermal flow sensor.
 J.-C. Galas, D. Bartolo, V. Studer, Active connectors for microfluidic drops on demand, New J. Phys. 11 (2009) 075027;
After reflow ma-P 1275HV is used as mask for moulding PDMS in the fabrication of active microfluidic connectors.
micro resist technology is a single entry point for specialty chemicals used in micro and nano manufacturing in Europe. The portfolio of in-house products is complemented by the strategic sales of associated products that are manufactured by our international partners. Here we act as a high-service distributor and offer European medium-sized companies a wide range of complementary products from a single source, which can be used for both established and innovative production and manufacturing processes.
DuPont Electronic Solutions (formerly DOW Electronic Materials / Rohm and Haas Europe Trading ApS)
We offer products for semiconductor technologies, advanced packaging and dry film resists from our partner DuPont, with whom we have been working for more than 20 years.
Kayaku Advanced Materials, Inc. (formerly MicroChem Corp.)
We offer photoresists and specialty chemicals for MEMS and microelectronic applications from our partner Kayaku Advanced Materials, with whom we have been working for more than 20 years.
DJ MicroLaminates, Inc.
We offer dry film resists for MEMS, microfluidics and packaging applications from our partner DJ MicroLaminates, with whom we have been cooperating for over two years.
Dry films are ready-to-use polymer films as laminate foil with a high accuracy of the film thickness and excellent adhesion behaviour on various substrates. They are very simple in handling, photo-structurable and both as cut sheets and as roll material available.
Special designed functional materials from the product groups Hybrid Polymers, Photoresists, and Nanoimprint Polymers for the deposition and alternative patterning using inkjet printing process
micro resist technology offers a broad portfolio of UV-curable hybrid polymer products for micro-optical applications. Their excellent optical transparency and high thermal stability makes them perfectly suitable for the production of polymer-based optical components and waveguides. The main fields of application are micro lenses, diffractive optical elements (DOE), gratings, and single-mode or multi-mode waveguides.
OrmoComp®: DE 30 210 075 433; IR 1 091 982 ; TW 100030626; OrmoClear®: DE 30 210 075 434; IR 1 091 359 ; TW 100030628; OrmoStamp®: DE 30 210 075 435; IR 1 092 621 ; TW 100030629; OrmoPrime®: DE 30 210 075 436
Positive Photoresists for UV lithography (mask aligner, laser, greyscale exposure) and e-beam lithography
Photoresists for UV (mask aligner, laser)/ DUV and e-beam lithography
Nanoimprint Lithography (NIL) is a straight forward, low cost, and high throughput capable technology for the fabrication of nanometer scaled patterns. Main application fields are photonics, next generation electronics, as well as bio- and sensor applications.
micro resist technology GmbH has provided tailor-made resist formulations for nanoimprint lithography (NIL) since 1999. The unique key features of our products are outstanding film forming and imprinting performance beside excellent pattern fidelity and plasma etch stability. Besides our highly innovative material developments in close contact to industrial needs, our strength is the ability to adjust our materials in film thickness as well as addressing certain needs of the specific use cases within the formulation. Our nanoimprint resists are mostly applied as an etch mask for pattern transfer into various substrates, like Si, SiO2, Al or sapphire.
Our portfolio covers materials for the classical thermal NIL (T-NIL), in which a thermoplastic polymer is used, as well as UV-NIL, in which a liquid formulation is photo crosslinked upon photo exposure. With our technological expertise and know-how we are able to find the right material for your process and applications. Please contact us for your technical support!