Negative resist series for UV lithography
Single layer lift-off application, conventional pattern transfer processes
Unique Features
- Tunable pattern profile: vertical to undercut
- Good thermal stability of the resist pattern
- High wet and dry etch resistance
- Aqueous alkaline development
- Easy to remove
ma-N 400: Thermal stability up to 110°C for metal evaporation
- Mask for lift-off processes
- Etch mask for semiconductors and metals
- Mask for ion implantation
ma-N 1400
Resist | Film thickness @ 3000 rpm |
---|---|
ma-N 1405 | 0.5 µm |
ma-N 1407 | 0.7 µm |
ma-N 1410 | 1.0 µm |
ma-N 1420 | 2.0 µm |
ma-N 1440 | 4.0 µm |