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ma-P 1200G series
Positive Photoresists
Etch mask, electroplating mould
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Photoresist series for greyscale lithography
ma-P 1200G is a positive tone photoresist series specifically designed for the requirements of greyscale lithography. Standard binary lithography is also possible.
Unique Features
  • Reduced contrast
  • Film thickness up to 60 µm and higher
  • 50-60 µm depth range of the patterns possible in greyscale lithography
  • Spectral sensitivity 350…450 nm
  • High intensity laser exposure possible without outgassing
  • Aqueous alkaline development, for greyscale lithography with TMAH based developers, for standard binary lithography also with metal ion bearing developers
  • Suitable for electroplating
  • Suitable for dry etch processes e.g. with CHF3, CF4, SF6
  • Suitable for pattern reflow after standard binary lithography
Applications
  • Use of manufactured 3D patterns in micro-optics, MEMS and MOEMS, displays
  • Pattern transfer by
    • UV moulding
    • Etching
    • Electroplating
Resist Film Thickness [µm]
spin coating @ 3000 rpm		 Spectral Sensitivity Special Feature
ma-P 1215G 1.5 350 - 450nm

i-line - 365 nm

h-line - 405 nm

g-line - 436 nm

 "For grey scale lithography of
up to 80 µm thick films
Suitable for standard binary lithography
High stability in plating baths
High etch resistance"
ma-P 1225G 2.5
ma-P 1275G 9.5

(up to 60 µm at lower spin speeds with single-coating)

Recommended process chemicals:

Thinner: ma-T 1050
Developer: ma-D 532/S, mr-D 526/S (TMAH based) for greyscale lithography, ma-D 331 (NaOH based) for standard lithography
Remover: mr-Rem 700 (NMP & NEP free), mr-Rem 500 (NMP free), ma-R 404/S (strongly alkaline)

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ma-P 1200 series / ma-P 1275HV
Positive Photoresists
Etch mask, electroplating mould
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Positive Photoresist Series and Thick Film Photoresists for UV lithography
ma-P 1200 series and ma-P 1275 & ma-P 1275HV for microsystems technology and microelectronics
Unique Features
  • Film thickness up to 60 μm in one spin-coating step
  • Broadband-, g- and i-line exposure
  • High stability in acid and alkaline plating baths
  • High dry and wet etch resistance
  • Good thermal stability of the resist patterns attainable
  • Aqueous alkaline development
  • Side wall angle up to 87° with mask aligner broadband exposure
  • Suitable for pattern reflow
Applications
  • Etch mask - metals and semiconductors
  • Mould for electroplating
  • Fabrication of micro optical components, e.g. micro lenses by pattern transfer from reflowed resist patterns
  • Mask for ion implantation
Resist Film Thickness [µm]
spin coating @ 3000 rpm		 Spectral Sensitivity Special Feature
ma-P 1205 0.5 350 - 450nm

i-line - 365 nm

h-line - 405 nm

g-line - 436 nm

 For standard binary lithography
of 0.3 - 50 µm thick films
High stability in plating baths
High etch resistance
ma-P 1210 1.0
ma-P 1215 1.5
ma-P 1225 2.5
ma-P 1240 4.0
ma-P 1275 7.5

(up to 40 µm at lower spin speeds)
ma-P 1275HV 11

(up to 50 µm at lower spin speeds)

Recommended process chemicals:

Thinner: ma-T 1050
Developer: mr-D 526/S (TMAH based), ma-D 331 (NaOH based)
Remover: mr-Rem 700 (NMP & NEP free), mr-Rem 500 (NMP free), ma-R 404/S (strongly alkaline)

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mr-P 1200LIL series
Positive Photoresists
Dry etch mask
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Photoresist series for UV lithography
mr-P 1200LIL is a series of thin positive tone photoresists for high resolution applications. It is excellently suited for laserinterference lithography (LIL).
Unique Features
  • 100…500 nm film thickness
  • Sensitive to 350…450 nm exposure
  • Steep sidewalls due to high contrast enable high quality etched patterns
  • Aqueous alkaline development
  • Etch resistant
Applications

Masking of substrate surfaces during fabrication of steep-edged nano structures for diffractive optics:

  • Laminary gratings
  • VLS gratings
Resist Film Thickness [µm]
spin coating @ 3000 rpm		 Spectral Sensitivity Special Feature
mr-P 1201LIL 0.1 330 - 450nm

i-line - 365 nm

h-line - 405 nm

g-line - 463nm

 For fabrication of steep-edged nano structures with laser interference lithography
mr-P 1202LIL 0.2

Recommended process chemicals:

Thinner: ma-T 1050
Developer: ma-D 374/S (metal ion bearing, silicate/phosphate based)
Remover: mr-Rem 700 (NMP & NEP free), mr-Rem 500 (NMP free), ma-R 404/S (strongly alkaline)

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Negative Photoresists

Photoresists for UV (mask aligner, laser)/ DUV and e-beam lithography

  • Effective for broadband and i-line, Deep UV, e-beam exposure, or laser direct writing @ 405 nm
  • Lift-off resists with tunable pattern profile, high temperature stability up to 160 °C
  • Variety of viscosities for different film thicknesses in one spin-coating step
     
  • For pattern transfer: Physical vapour deposition (PVD) and single  layer lift-off, etch mask, mould for electroplating
  • For permanent applications: Polymeric waveguides
  • Use in microsystems technology, microelectronics, micro-optics  – manufacture of e.g. LEDs, ICs, MEMS, flat panel displays, fiber optics telecommunications devices
View all Negativ Photoresists
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Positive Photoresists

Positive Photoresists for UV lithography (mask aligner, laser, greyscale exposure) and e-beam lithography

  • Variety of viscosities for 0.1 µm – 60 µm film thickness in one spin-coating step
  • Effective for broadband, g-line, h-line or i-line exposure, laser direct writing at 350…450 nm and e-beam lithography
  • No post exposure bake
  • Easy removal
     
  • For pattern transfer: Etch mask, mould for electroplating, mould for UV moulding
  • Use in microsystems technology, microelectronics, micro-optics – manufacture of e.g. MEMS, LEDs, ICs, MOEMS, fiber optics telecommunications devices, flat panel displays
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Hybrid Polymers

micro resist technology offers a broad portfolio of UV-curable hybrid polymer products for micro-optical applications. Their excellent optical transparency and high thermal stability makes them perfectly suitable for the production of polymer-based optical components and waveguides. The main fields of application are micro lenses, diffractive optical elements (DOE), gratings, and single-mode or multi-mode waveguides.

OrmoComp®: DE 30 210 075 433; IR 1 091 982 ; TW 100030626; OrmoClear®: DE 30 210 075 434; IR 1 091 359 ; TW 100030628; OrmoStamp®: DE 30 210 075 435; IR 1 092 621 ; TW 100030629; OrmoPrime®: DE 30 210 075 436

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Nanoimprint Resists

Nanoimprint Lithography (NIL) is a straight forward, low cost, and high throughput capable technology for the fabrication of nanometer scaled patterns. Main application fields are photonics, next generation electronics, as well as bio- and sensor applications.

micro resist technology GmbH has provided tailor-made resist formulations for nanoimprint lithography (NIL) since 1999. The unique key features of our products are outstanding film forming and imprinting performance beside excellent pattern fidelity and plasma etch stability. Besides our highly innovative material developments in close contact to industrial needs, our strength is the ability to adjust our materials in film thickness as well as addressing certain needs of the specific use cases within the formulation. Our nanoimprint resists are mostly applied as an etch mask for pattern transfer into various substrates, like Si, SiO2, Al or sapphire.

Our portfolio covers materials for the classical thermal NIL (T-NIL), in which a thermoplastic polymer is used, as well as UV-NIL, in which a liquid formulation is photo crosslinked upon photo exposure. With our technological expertise and know-how we are able to find the right material for your process and applications. Please contact us for your technical support!

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Functional materials for inkjet-printing

Special designed functional materials from the product groups Hybrid Polymers, Photoresists, and Nanoimprint Polymers for the deposition and alternative patterning using inkjet printing process

  • Available in different viscosities (adjustable)
  • Suitable in commercial inkjet printing devices
  • Focused on high reliability of droplet generation
  • UV-curable formulations

 

  • Usable as a permanent material for optical application (e.g. lenses, wave guides, optical couplers, diffractive elements, …)
  • Packaging material in the micro electronic
  • Deposition / patterning on substrates with surface topography
  • Imprint material for nano-structuring with high dose accuracy
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Dry Films

Dry films are ready-to-use polymer films as laminate foil with a high accuracy of the film thickness and excellent adhesion behaviour on various substrates. They are very simple in handling, photo-structurable and both as cut sheets and as roll material available.

  • Available in different film thicknesses
  • UV-crosslinking as negative photoresist
  • Feasibility of high aspect ratios
  • Vertical sidewalls
  • Multi lamination possible – up to 6 layer  complex multi-layer designs
  • High chemical resilience

 

  • Application as permanent material for optical application (e.g. lenses, wave guides …), in micro fluidics
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Resist Alliance

micro resist technology is a single entry point for specialty chemicals used in micro and nano manufacturing in Europe. The portfolio of in-house products is complemented by the strategic sales of associated products that are manufactured by our international partners. Here we act as a high-service distributor and offer European medium-sized companies a wide range of complementary products from a single source, which can be used for both established and innovative production and manufacturing processes.

DuPont Electronic Solutions (formerly DOW Electronic Materials / Rohm and Haas Europe Trading ApS)

We offer products for semiconductor technologies, advanced packaging and dry film resists from our partner DuPont, with whom we have been working for more than 20 years.

Kayaku Advanced Materials, Inc. (formerly MicroChem Corp.)

We offer photoresists and specialty chemicals for MEMS and microelectronic applications from our partner Kayaku Advanced Materials, with whom we have been working for more than 20 years.

DJ MicroLaminates, Inc.

We offer dry film resists for MEMS, microfluidics and packaging applications from our partner DJ MicroLaminates, with whom we have been cooperating for over two years.