Photoresist series for greyscale lithography
ma-P 1200G is a positive tone photoresist series specifically designed for the requirements of greyscale lithography. Standard binary lithography is also possible.
Unique Features
- Reduced contrast
- Film thickness up to 60 µm and higher
- 50-60 µm depth range of the patterns possible in greyscale lithography
- Spectral sensitivity 350…450 nm
- High intensity laser exposure possible without outgassing
- Aqueous alkaline development, for greyscale lithography with TMAH based developers, for standard binary lithography also with metal ion bearing developers
- Suitable for electroplating
- Suitable for dry etch processes e.g. with CHF3, CF4, SF6
- Suitable for pattern reflow after standard binary lithography
Applications
Use of manufactured 3D patterns in micro-optics, MEMS and MOEMS, displays
Pattern transfer by
- UV moulding
- Etching
- Electroplating
Resist | Film thickness @ 3000 rpm |
---|---|
ma-P 1215G | 1.5 µm |
ma-P 1225G | 2.5 µm |
ma-P 1275G | 9.5 µm |