Photoresist series for greyscale lithography
ma-P 1200G is a positive tone photoresist series specifically designed for the requirements of greyscale lithography. Standard binary lithography is also possible.
Unique Features
- Reduced contrast
- Film thickness up to 60 µm and higher
- 50-60 µm depth range of the patterns possible in greyscale lithography
- Spectral sensitivity 350…450 nm
- High intensity laser exposure possible without outgassing
- Aqueous alkaline development, for greyscale lithography with TMAH based developers, for standard binary lithography also with metal ion bearing developers
- Suitable for electroplating
- Suitable for dry etch processes e.g. with CHF3, CF4, SF6
- Suitable for pattern reflow after standard binary lithography
Applications
- Use of manufactured 3D patterns in micro-optics, MEMS and MOEMS, displays
- Pattern transfer by
- UV moulding
- Etching
- Electroplating
Resist | Film Thickness [µm] spin coating @ 3000 rpm |
Spectral Sensitivity | Special Feature |
ma-P 1215G | 1.5 | 350 - 450nm
i-line - 365 nm h-line - 405 nm g-line - 436 nm |
"For grey scale lithography of up to 80 µm thick films Suitable for standard binary lithography High stability in plating baths High etch resistance" |
ma-P 1225G | 2.5 | ||
ma-P 1275G | 9.5
(up to 60 µm at lower spin speeds with single-coating) |
Recommended process chemicals:
Thinner: ma-T 1050
Developer: ma-D 532/S, mr-D 526/S (TMAH based) for greyscale lithography, ma-D 331 (NaOH based) for standard lithography
Remover: mr-Rem 700 (NMP & NEP free), mr-Rem 500 (NMP free), ma-R 404/S (strongly alkaline)