ma-P 1200 is a positive tone photoresist series designed for the use in microelectronics and microsystems technology. The resists are available in a variety of viscosities for film thicknesses of 0.3 – 40 μm in one spin-coating step

Unique Features

  • Broadband, g-, h- and i-line exposure
  • Very good pattern stability in wet etch processes and acid and alkaline plating baths
  • Highly stable in dry etch processes e.g. CHF3, CF4, SF6
  • Aqueous alkaline development 

Applications

  • Mask for etching e.g.Si, SiO2, other semiconductors, metals
  • Mask for ion implantation
  • Mould for electroplating
     
Resist

Film thickness @ 3000 rpm

ma-P 1205

0.5 µm

ma-P 1210

1.0 µm

ma-P 1215

1.5 µm

ma-P 1225

2.5 µm

ma-P 1240

4.0 µm

ma-P 1275

7.5 µm

Our positive photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

HMDS Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)

Interested in ma-P 1200 ? Contact us!

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