Single layer lift-off application, conventional pattern transfer processes

Unique Features

  • Tunable pattern profile: vertical to undercut
  • Good thermal stability of the resist pattern
  • High wet and dry etch resistance
  • Aqueous alkaline development
  • Easy to remove

ma-N 400: Thermal stability up to 110°C for metal evaporation

ma-N 1400: Thermal stability up to 160°C for metal evaporation and sputtering

Application

  • Mask for lift-off processes
  • Etch mask for semiconductors and metals
  • Mask for ion implantation

ma-N 400

Resist Film thickness @ 3000 rpm
ma-N 405    0.5 µm
ma-N 415 1.5 µm
ma-N 420 2.0 µm
ma-N 440    4.1 µm
ma-N 490   7.5 µm

 ma-N 1400

Resist    Film thickness @ 3000 rpm
ma-N 1405 0.5 µm
ma-N 1407    0.7 µm
ma-N 1410    1.0 µm
ma-N 1420 2.0 µm
ma-N 1440 4.0 µm

Our negative photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)

Interested in ma-N 400 & ma-N 1400 series ? Contact us!

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