mr-NIL210 is a purely organic, photo-curable NIL resist with oustanding dry etch characteristics.  It features an excellent curing and nanoimprint performance and is particularly suitable for soft-NIL using soft stamp materials, e.g. PDMS.

Unique Features

  • Excellent curing properties, even under air (presence of oxygen)
  • Compatibility to PDMS working stamps for soft-NIL, preferably applied in combination with UV-PDMS KER-4690 
  • Outstanding dry etch stability against various substrates like silicon, quartz, or aluminum
  • Purely organic resist, residue-free removable with oxygen plasma possible after curing

Applications

  • Etch mask for pattern transfer processes (dry and wet etching)
  • Fabrication of nanostructures for
    • LEDs, photonic crystals
    • Patterned sapphire substrates (PSS)
    • Microelectronics
    • Organic electronics (OLED, OPV, OTFT)
    • Data storage (bit patterned media)
    • Lift-off applications in combination with  e.g. LOR (MCC, USA)

 Recommended process parameters

Process step

Process parameter

Spin coating

3000 rpm for 30 s

Prebake

60 °C for 180 s

Imprint temperature

Room temperature

Imprint pressure

> 100 mbar

Radiation intensity

mr-NIL210-100nm: 100 mW cm-2
mr-NIL210-200nm: 50 mW cm-2
mr-NIL210-500nm: 50 mW cm-2

Radiation source

Option 1: broad band
Option 2: LED (365-405 nm)

Thinner

ma-T 1078

Primer

mr-APS1

 Our available standard film thicknesses

mr-NIL210 version

Film thickness @3000 rpm*

mr-NIL210-100nm

100 nm

mr-NIL210-200nm

200 nm

mr-NIL210-500nm

500 nm

* Customized film thickness available on request up to 2 µm

This NIL resist series is available in the following quantities:

  • 100 ml
  • 250 ml
  • 500 ml
  • Larger bottle sizes available on request

Interested in mr-NIL210 series ? Contact us!

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