mr-UVCur26SF

Photo-Nanoimprint Lithography

mr-UVCur26SF is a pure organic and solvent-free Photo-NIL resist developed for inkjet dispensing. The low viscosity and the fast photo-curing reaction makes mr-UVCur26SF suitable for continuous roll-to-roll NIL processes.

Unique Features

  • Inkjet dispensing at room temperature due to low viscosity (15 mPas), e.g. for step-and-repeat NIL processes
  • No prebake after substrate coating due to solvent-free resist formulation
  • Very fast curing for high throughput R2R-NIL, web speed up to 30 m/min shown
  • Good adhesion to PC and PET substrates
  • Excellent dry etch stability for pattern transfer processes
  • Residue-free removable with oxygen plasma

Applications

  • Etch mask for pattern transfer processes (dry and wet etching)
  • Application of  nanostructures on polymer foils
  • Fabrication of nanostructures for
    • Nano-optical devices, SOEs
    • Organic electronics (OLED, OPV, OTFT)
    • Microelectronics
    • LEDs, photonic crystals

 Process parameters for inkjet dispensing

Process step

Process parameter

Inkjet parameter

Piezo actuated printhead, dispensing possible at room temperature

Prebake

Not necessary (solvent-free)

Imprint temperature

Room temperature

Imprint pressure

> 100 mbar

Radiation dose

> 500 mJ cm-2 (λ =  320 – 420 nm)

Thinner

Not recommended

Primer

mr-APS1 (e.g. for Si)

 Process parameters for roll-to-roll NIL

Process step

Process parameter

Resist application method

Gravure printing, inkjet dispensing, etc.

Prebake

Not necessary (solvent-free)

Web speed

Depending on and limited by tool setup and light source, up to 30 m/min shown so far

Imprint temperature

Room temperature

Imprint pressure

Depending on roller imprinter

Radiation dose

> 500 mJ cm-2 (λ =  320 – 420 nm)

Thinner

Not recommended

Primer

Not necessary (good adhesion to PC, PET, etc.)

mr-UVCur26SF is available in the following quantities:

  • 100 ml
  • 250 ml
  • 500 ml
  • 1000 ml
  • Larger packing sizes available on request

mr-UVCur21 series

Photo-Nanoimprint Lithography

mr-UVCur21 is a photo-curable NIL resist with excellent dry etching stability

Unique Features

  • Low-viscosity photo-NIL formulation, fast filling of stamp cavities
  • Fast curing at low UV dose and short imprint cycle times
  • Residue-free removal by oxygen plasma etching

Applications

Fabrication of nanostructures

  • Microelectronics
  • Data storage (BPM)
  • Nano-optical devices
  • Photonic crystals
  • Mask for pattern transfer processes (dry and wet etching)
  • Lift off applications in combination with e.g. LOR (from MCC, USA)
     

mr-UVCur21 version

Film thickness *

mr-UVCur21-100nm

100 nm

mr-UVCur21-200nm

200 nm

mr-UVCur21-300nm

300 nm

mr-UVCur21SF

1.7 µm

* Further film thicknesses available on request

Our NIL polymers are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

mr-NIL 6000E series

Combined thermal- and Photo-Nanoimprint Lithography

mr-NIL 6000E is a photo-curable thermoplastic NIL resist featuring excellent pattern stability after imprinting and radiation in subsequent processes with a thermal load

Unique Features

  • Excellent thermal structure stability in subsequent processes due to the photochemically induced crosslinking reaction during imprinting
  • 100% organic NIL resist → dry etching and stripping possible with pure oxygen plasma

Applications

  • Fabrication of nanopatterns by pattern transfer for e.g.
  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
     

mr-NIL 6000E version

Film thickness *

mr-NIL 6000.1E

100 nm

mr-NIL 6000.2E 200 nm
mr-NIL 6000.3E 300 nm

* Further film thicknesses available on request

Our NIL polymers are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

mr-I 9000M series

Thermal Nanoimprint Lithography

Thermally curable NIL resist (Thermoset - no Tg after imprinting)

Unique Features

  • Excellent thermal structure stability (up to 250 °C in a two-step imprinting process) in subsequent processes due to the thermally induced crosslinking reaction during imprinting
  • 100% organic resist → dry etching and stripping possible with pure oxygen plasma

Applications

Fabrication of nanopatterns by pattern transfer for e.g.

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
     

mr-I 9000M version *

Film thickness *

mr-I 9010M

100 nm

mr-I 9020M 200 nm
mr-I 9030M 300 nm
mr-I 9050M 500 nm
mr-I 9100M 1.0 µm

* Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
     
  • Available thinner: ma-T 1045
  • Resist stripping: oxygen plasma
  • Larger packing sizes available on request

SIPOL series

Thermal Nanoimprint Lithography

T-NIL resist (Tg = 63 °C) with a 10% content of covalently bonded Silicon acting as an etch mask in a bilayer approach for the realization of very high aspect ratio patterns after subsequent dry etch processes

Unique Features

Material deposition on top of underlayer UL1 using spin-coating technique

  • High oxygen plasma resistance due to a Si content of 10 %
  • Good stamp release characteristics give rise to a low defectivity rate

Applications

  • Fabrication of micro/nano-scale patterns with high aspect ratios >> 3
  • Patterned sapphire substrates (PSS) for fabrication of high brightness LEDs
  • Micro/nanopillars for nanofluidic devices, e.g. DNA electrophoresis
  • Fabrication of photonic crystals

Our available products with standard film thickness

SIPOL version* SIPOL film thickness *
SIPOL-100nm 100nm
SIPOL-200nm 200nm

* Customized film thickness available on request  

Recommended processing parameters

Process step Process parameter
Spin-coating 3000 rpm for 30 s
Softbake conditions 100 °C for 2 min
Imprint temperature 100-130 °C
Imprint pressure 10-30 bar
Imprint time 1-5 min

Stamp release temperature

20-50 °C
Resist thinner ma-T 1050
Resist stripping ma-T 1050, aceton, org. solvents

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
  • Larger packing sizes available on request

mr-I 8000R series

Thermal Nanoimprint Lithography

T-NIL resist featuring higher glass transition temperature (Tg = 115 °C) for increased pattern stability in subsequent processes

Unique Features

  • Facilitated stamp separation due to integrated fluorinated additive
  • 100% organic thermoplast → dry etching and stripping possible with pure oxygen plasma
  • Polymer soluble in aceton and other common solvents → easy cleaning

Applications

Fabrication of nanopatterns by pattern transfer for e.g.

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
  • Microfluidics, bio applications
  • Single layer lift-off
     
Parameter mr-I 7000R mr-I 8000R
Glass transition temperature Tg 50 °C 105 °C
Imprint temperature 120 °C - 140 °C 150 °C - 180 °C
Imprint pressure 20 - 40 bar 20 - 40 bar
Ready-to-use solutions for standard film thicknesses * (3000 U/min)

mr-I 7010R 100nm

mr-I 7020R 200nm

mr-I 7030R 300nm

mr-I 8010R 100nm

mr-I 8020R 200nm

mr-I 8030R 300nm

Resist thinner ma-T 1050 ma-T 1050
Resist stripping ma-T 1050, aceton, org. solvents or oxygen plasma ma-T 1050, aceton, org. solvents or oxygen plasma

 * Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
  • Larger packing sizes available on request

mr-I 7000R series

Thermal Nanoimprint Lithography

T-NIL resist featuring low glass transition temperature (Tg = 55 °C) for low temperature imprints

Unique Features

  • Facilitated stamp separation due to integrated fluorinated additive
  • 100% organic thermoplast → dry etching and stripping possible with pure oxygen plasma
  • Polymer soluble in aceton and other common solvents → easy cleaning
     

Applications

Fabrication of nanopatterns by pattern transfer for e.g

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
  • Microfluidics, bio applications
  • Single layer lift-off
     
Parameter mr-I 7000R mr-I 8000R
Glass transition temperature Tg 55 °C 115 °C
Imprint temperature 120 °C - 140 °C 150 °C - 180 °C
Imprint pressure 20 - 40 bar 20 - 40 bar
Ready-to-use solutions for standard film thicknesses * (3000 rpm)

mr-I 7010R 100nm

mr-I 7020R 200nm

mr-I 7030R 300nm

mr-I 8010R 100nm

mr-I 8020R 200nm

mr-I 8030R 300nm

Resist thinner ma-T 1050 ma-T 1050
Resist stripping ma-T 1050, aceton, org. solvents or oxygen plasma ma-T 1050, aceton, org. solvents or oxygen plasma

* Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
  • Larger packing sizes available on request

ma-N 2400 & mr-EBL 6000 series

E-Beam/ Deep UV Lithography

Conventional pattern transfer processes

Unique Features ma-N 2400 series for e-beam and deep UV lithography

  • High resolution capability (~ 40 - 50 nm)
  • Aqueous alkaline development
  • Good thermal stability of the resist patterns
  • High wet and dry etch resistance
  • Easy to remove

Unique Features mr-EBL 6000 series for e-beam lithography

  • Excellent thermal stability of the resist patterns
  • High wet and dry etch resistance
  • High resolution capability (~ 40 - 50 nm)
  • Post exposure bake (PEB) required

Applications

  • Mask for etching

ma-N 2400

Resist

Film thickness @ 3000 rpm

ma-N 2401

0.1 µm 

ma-N 2403

0.3 µm 

ma-N 2405

0.5 µm 

ma-N 2410

1.0 µm 

mr-EBL 6000

Resist

Film thickness @ 3000 rpm

mr-EBL 6000.1

0.1 µm 

mr-EBL 6000.3

0.3 µm 

mr-EBL 6000.5

0.5 µm 

Our negative photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

HMDS Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)