mr-I PMMA35k series

Thermal Nanoimprint Lithography

T-NIL resist (Tg = 105 °C) for fundametal NIL investigations

Unique Features

  • Good imprint behavior
  • Easy cleaning with conventional solvents

Applications

  • Basic investigations
     

mr-PMMA version

Film thickness *

mr-I PMMA35k-100nm 100 nm
mr-I PMMA35k-300nm 300 nm
mr-I PMMA35k-500nm 500 nm

* Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
  • Larger packing sizes available on request

mr-I T85 series

Thermal Nanoimprint Lithography

T-NIL resist (Tg = 85 °C) based on non-polar cyclo-olefin-copolymers (TOPAS)

Unique Features

  • Film thickness of up to 5 µm possible for the fabrication of microfluidic or lab-on-chip devices
  • 100% organic thermoplast → dry etching and stripping possible with pure oxygen plasma
  • featuring the highest optical transparency in the range of UV/vis and distinctive chemical stability against e.g. different solvents, acids, and bases

Applications

Lab-on-chip systems

  • Bio applications
  • Microfluidics
  • Microoptical elements
  • Wave guides
  • Single and multilayer systems
  • Mask for pattern transfer processes
     
Material characteristics and imprint parameters mr-I T85
Glass transition temperature 85 °C
Imprint temperature 130 – 150 °C
Imprint pressure 5 – 20 bar
Ready-to-use solutions for various film thicknesses (3000 rpm) *

mr-I T85-0.3 300 nm

mr-I T85-1.0 1.0 µm

mr-I T85-5.0 5.0 µm

* Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
  • Larger packing sizes available on request

mr-I 8000R series

Thermal Nanoimprint Lithography

T-NIL resist featuring higher glass transition temperature (Tg = 115 °C) for increased pattern stability in subsequent processes

Unique Features

  • Facilitated stamp separation due to integrated fluorinated additive
  • 100% organic thermoplast → dry etching and stripping possible with pure oxygen plasma
  • Polymer soluble in aceton and other common solvents → easy cleaning

Applications

Fabrication of nanopatterns by pattern transfer for e.g.

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
  • Microfluidics, bio applications
  • Single layer lift-off
     
Parameter mr-I 7000R mr-I 8000R
Glass transition temperature Tg 50 °C 105 °C
Imprint temperature 120 °C - 140 °C 150 °C - 180 °C
Imprint pressure 20 - 40 bar 20 - 40 bar
Ready-to-use solutions for standard film thicknesses * (3000 U/min)

mr-I 7010R 100nm

mr-I 7020R 200nm

mr-I 7030R 300nm

mr-I 8010R 100nm

mr-I 8020R 200nm

mr-I 8030R 300nm

Resist thinner ma-T 1050 ma-T 1050
Resist stripping ma-T 1050, aceton, org. solvents or oxygen plasma ma-T 1050, aceton, org. solvents or oxygen plasma

 * Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
  • Larger packing sizes available on request

mr-I 7000R series

Thermal Nanoimprint Lithography

T-NIL resist featuring low glass transition temperature (Tg = 55 °C) for low temperature imprints

Unique Features

  • Facilitated stamp separation due to integrated fluorinated additive
  • 100% organic thermoplast → dry etching and stripping possible with pure oxygen plasma
  • Polymer soluble in aceton and other common solvents → easy cleaning
     

Applications

Fabrication of nanopatterns by pattern transfer for e.g

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
  • Microfluidics, bio applications
  • Single layer lift-off
     
Parameter mr-I 7000R mr-I 8000R
Glass transition temperature Tg 55 °C 115 °C
Imprint temperature 120 °C - 140 °C 150 °C - 180 °C
Imprint pressure 20 - 40 bar 20 - 40 bar
Ready-to-use solutions for standard film thicknesses * (3000 rpm)

mr-I 7010R 100nm

mr-I 7020R 200nm

mr-I 7030R 300nm

mr-I 8010R 100nm

mr-I 8020R 200nm

mr-I 8030R 300nm

Resist thinner ma-T 1050 ma-T 1050
Resist stripping ma-T 1050, aceton, org. solvents or oxygen plasma ma-T 1050, aceton, org. solvents or oxygen plasma

* Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
  • Larger packing sizes available on request

ma-P 1200

UV Lithography

ma-P 1200 is a positive tone photoresist series designed for the use in microelectronics and microsystems technology. The resists are available in a variety of viscosities for film thicknesses of 0.3 – 40 μm in one spin-coating step

Unique Features

  • Broadband, g-, h- and i-line exposure
  • Very good pattern stability in wet etch processes and acid and alkaline plating baths
  • Highly stable in dry etch processes e.g. CHF3, CF4, SF6
  • Aqueous alkaline development 

Applications

  • Mask for etching e.g.Si, SiO2, other semiconductors, metals
  • Mask for ion implantation
  • Mould for electroplating
     
Resist

Film thickness @ 3000 rpm

ma-P 1205

0.5 µm

ma-P 1210

1.0 µm

ma-P 1215

1.5 µm

ma-P 1225

2.5 µm

ma-P 1240

4.0 µm

ma-P 1275

7.5 µm

Our positive photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

HMDS Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)

ma-P 1200G

Greyscale Lithography

ma-P 1200G is a positive tone photoresist series specifically designed for the requirements of greyscale lithography. Standard binary lithography is also possible.

Unique Features

  • Reduced contrast
  • Film thickness up to 60 µm and higher
  • 50-60 µm depth range of the patterns possible in greyscale lithography
  • Spectral sensitivity 350…450 nm
  • High intensity laser exposure possible without outgassing
  • Aqueous alkaline development, for greyscale lithography with TMAH based developers, for standard binary lithography also with metal ion bearing developers
  • Suitable for electroplating
  • Suitable for dry etch processes e.g. with CHF3, CF4, SF6
  • Suitable for pattern reflow after standard binary lithography  

Applications

Use of manufactured 3D patterns in micro-optics, MEMS and MOEMS, displays

Pattern transfer by

  • UV moulding
  • Etching
  • Electroplating
Resist

Film thickness @ 3000 rpm

ma-P 1215G

1.5 µm

ma-P 1225G

2.5 µm

ma-P 1275G

9.5 µm

Our positive photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

HMDS Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)