ma-N 400 & ma-N 1400 series

UV lithography (broadband and i line exposure)

Single layer lift-off application, conventional pattern transfer processes

Unique Features

  • Tunable pattern profile: vertical to undercut
  • Good thermal stability of the resist pattern
  • High wet and dry etch resistance
  • Aqueous alkaline development
  • Easy to remove

ma-N 400: Thermal stability up to 110°C for metal evaporation

ma-N 1400: Thermal stability up to 160°C for metal evaporation and sputtering

Application

  • Mask for lift-off processes
  • Etch mask for semiconductors and metals
  • Mask for ion implantation

ma-N 400

Resist Film thickness @ 3000 rpm
ma-N 405    0.5 µm
ma-N 415 1.5 µm
ma-N 420 2.0 µm
ma-N 440    4.1 µm
ma-N 490   7.5 µm

 ma-N 1400

Resist    Film thickness @ 3000 rpm
ma-N 1405 0.5 µm
ma-N 1407    0.7 µm
ma-N 1410    1.0 µm
ma-N 1420 2.0 µm
ma-N 1440 4.0 µm

Our negative photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)

mr-NIL210 series

Photo-Nanoimprint Lithography

mr-NIL210 is a purely organic, photo-curable NIL resist with oustanding dry etch characteristics.  It features an excellent curing and nanoimprint performance and is particularly suitable for soft-NIL using soft stamp materials, e.g. PDMS.

Unique Features

  • Excellent curing properties, even under air (presence of oxygen)
  • Compatibility to PDMS working stamps for soft-NIL, preferably applied in combination with UV-PDMS KER-4690 
  • Outstanding dry etch stability against various substrates like silicon, quartz, or aluminum
  • Purely organic resist, residue-free removable with oxygen plasma possible after curing

Applications

  • Etch mask for pattern transfer processes (dry and wet etching)
  • Fabrication of nanostructures for
    • LEDs, photonic crystals
    • Patterned sapphire substrates (PSS)
    • Microelectronics
    • Organic electronics (OLED, OPV, OTFT)
    • Data storage (bit patterned media)
    • Lift-off applications in combination with  e.g. LOR (MCC, USA)

 Recommended process parameters

Process step

Process parameter

Spin coating

3000 rpm for 30 s

Prebake

60 °C for 180 s

Imprint temperature

Room temperature

Imprint pressure

> 100 mbar

Radiation intensity

mr-NIL210-100nm: 100 mW cm-2
mr-NIL210-200nm: 50 mW cm-2
mr-NIL210-500nm: 50 mW cm-2

Radiation source

Option 1: broad band
Option 2: LED (365-405 nm)

Thinner

ma-T 1078

Primer

mr-APS1

 Our available standard film thicknesses

mr-NIL210 version

Film thickness @3000 rpm*

mr-NIL210-100nm

100 nm

mr-NIL210-200nm

200 nm

mr-NIL210-500nm

500 nm

* Customized film thickness available on request up to 2 µm

This NIL resist series is available in the following quantities:

  • 100 ml
  • 250 ml
  • 500 ml
  • Larger bottle sizes available on request

mr-UVCur21 series

Photo-Nanoimprint Lithography

mr-UVCur21 is a photo-curable NIL resist with excellent dry etching stability

Unique Features

  • Low-viscosity photo-NIL formulation, fast filling of stamp cavities
  • Fast curing at low UV dose and short imprint cycle times
  • Residue-free removal by oxygen plasma etching

Applications

Fabrication of nanostructures

  • Microelectronics
  • Data storage (BPM)
  • Nano-optical devices
  • Photonic crystals
  • Mask for pattern transfer processes (dry and wet etching)
  • Lift off applications in combination with e.g. LOR (from MCC, USA)
     

mr-UVCur21 version

Film thickness *

mr-UVCur21-100nm

100 nm

mr-UVCur21-200nm

200 nm

mr-UVCur21-300nm

300 nm

mr-UVCur21SF

1.7 µm

* Further film thicknesses available on request

Our NIL polymers are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

mr-NIL 6000E series

Combined thermal- and Photo-Nanoimprint Lithography

mr-NIL 6000E is a photo-curable thermoplastic NIL resist featuring excellent pattern stability after imprinting and radiation in subsequent processes with a thermal load

Unique Features

  • Excellent thermal structure stability in subsequent processes due to the photochemically induced crosslinking reaction during imprinting
  • 100% organic NIL resist → dry etching and stripping possible with pure oxygen plasma

Applications

  • Fabrication of nanopatterns by pattern transfer for e.g.
  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
     

mr-NIL 6000E version

Film thickness *

mr-NIL 6000.1E

100 nm

mr-NIL 6000.2E 200 nm
mr-NIL 6000.3E 300 nm

* Further film thicknesses available on request

Our NIL polymers are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

mr-I 9000M series

Thermal Nanoimprint Lithography

Thermally curable NIL resist (Thermoset - no Tg after imprinting)

Unique Features

  • Excellent thermal structure stability (up to 250 °C in a two-step imprinting process) in subsequent processes due to the thermally induced crosslinking reaction during imprinting
  • 100% organic resist → dry etching and stripping possible with pure oxygen plasma

Applications

Fabrication of nanopatterns by pattern transfer for e.g.

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
     

mr-I 9000M version *

Film thickness *

mr-I 9010M

100 nm

mr-I 9020M 200 nm
mr-I 9030M 300 nm
mr-I 9050M 500 nm
mr-I 9100M 1.0 µm

* Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
     
  • Available thinner: ma-T 1045
  • Resist stripping: oxygen plasma
  • Larger packing sizes available on request

ma-N 2400 & mr-EBL 6000 series

E-Beam/ Deep UV Lithography

Conventional pattern transfer processes

Unique Features ma-N 2400 series for e-beam and deep UV lithography

  • High resolution capability (~ 40 - 50 nm)
  • Aqueous alkaline development
  • Good thermal stability of the resist patterns
  • High wet and dry etch resistance
  • Easy to remove

Unique Features mr-EBL 6000 series for e-beam lithography

  • Excellent thermal stability of the resist patterns
  • High wet and dry etch resistance
  • High resolution capability (~ 40 - 50 nm)
  • Post exposure bake (PEB) required

Applications

  • Mask for etching

ma-N 2400

Resist

Film thickness @ 3000 rpm

ma-N 2401

0.1 µm 

ma-N 2403

0.3 µm 

ma-N 2405

0.5 µm 

ma-N 2410

1.0 µm 

mr-EBL 6000

Resist

Film thickness @ 3000 rpm

mr-EBL 6000.1

0.1 µm 

mr-EBL 6000.3

0.3 µm 

mr-EBL 6000.5

0.5 µm 

Our negative photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

HMDS Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)

ma-P 1200

UV Lithography

ma-P 1200 is a positive tone photoresist series designed for the use in microelectronics and microsystems technology. The resists are available in a variety of viscosities for film thicknesses of 0.3 – 40 μm in one spin-coating step

Unique Features

  • Broadband, g-, h- and i-line exposure
  • Very good pattern stability in wet etch processes and acid and alkaline plating baths
  • Highly stable in dry etch processes e.g. CHF3, CF4, SF6
  • Aqueous alkaline development 

Applications

  • Mask for etching e.g.Si, SiO2, other semiconductors, metals
  • Mask for ion implantation
  • Mould for electroplating
     
Resist

Film thickness @ 3000 rpm

ma-P 1205

0.5 µm

ma-P 1210

1.0 µm

ma-P 1215

1.5 µm

ma-P 1225

2.5 µm

ma-P 1240

4.0 µm

ma-P 1275

7.5 µm

Our positive photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

HMDS Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)