ma-N 400 & ma-N 1400 series

UV lithography (broadband and i line exposure)

Single layer lift-off application, conventional pattern transfer processes

Unique Features

  • Tunable pattern profile: vertical to undercut
  • Good thermal stability of the resist pattern
  • High wet and dry etch resistance
  • Aqueous alkaline development
  • Easy to remove

ma-N 400: Thermal stability up to 110°C for metal evaporation

ma-N 1400: Thermal stability up to 160°C for metal evaporation and sputtering

Application

  • Mask for lift-off processes
  • Etch mask for semiconductors and metals
  • Mask for ion implantation

ma-N 400

Resist Film thickness @ 3000 rpm
ma-N 405    0.5 µm
ma-N 415 1.5 µm
ma-N 420 2.0 µm
ma-N 440    4.1 µm
ma-N 490   7.5 µm

 ma-N 1400

Resist    Film thickness @ 3000 rpm
ma-N 1405 0.5 µm
ma-N 1407    0.7 µm
ma-N 1410    1.0 µm
ma-N 1420 2.0 µm
ma-N 1440 4.0 µm

Our negative photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)

mr-UVCur21 series

Photo-Nanoimprint Lithography

mr-UVCur21 is a photo-curable NIL resist with excellent dry etching stability

Unique Features

  • Low-viscosity photo-NIL formulation, fast filling of stamp cavities
  • Fast curing at low UV dose and short imprint cycle times
  • Residue-free removal by oxygen plasma etching

Applications

Fabrication of nanostructures

  • Microelectronics
  • Data storage (BPM)
  • Nano-optical devices
  • Photonic crystals
  • Mask for pattern transfer processes (dry and wet etching)
  • Lift off applications in combination with e.g. LOR (from MCC, USA)
     

mr-UVCur21 version

Film thickness *

mr-UVCur21-100nm

100 nm

mr-UVCur21-200nm

200 nm

mr-UVCur21-300nm

300 nm

mr-UVCur21SF

1.7 µm

* Further film thicknesses available on request

Our NIL polymers are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

mr-NIL 6000E series

Combined thermal- and Photo-Nanoimprint Lithography

mr-NIL 6000E is a photo-curable thermoplastic NIL resist featuring excellent pattern stability after imprinting and radiation in subsequent processes with a thermal load

Unique Features

  • Excellent thermal structure stability in subsequent processes due to the photochemically induced crosslinking reaction during imprinting
  • 100% organic NIL resist → dry etching and stripping possible with pure oxygen plasma

Applications

  • Fabrication of nanopatterns by pattern transfer for e.g.
  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
     

mr-NIL 6000E version

Film thickness *

mr-NIL 6000.1E

100 nm

mr-NIL 6000.2E 200 nm
mr-NIL 6000.3E 300 nm

* Further film thicknesses available on request

Our NIL polymers are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

mr-I 9000M series

Thermal Nanoimprint Lithography

Thermally curable NIL resist (Thermoset - no Tg after imprinting)

Unique Features

  • Excellent thermal structure stability (up to 250 °C in a two-step imprinting process) in subsequent processes due to the thermally induced crosslinking reaction during imprinting
  • 100% organic resist → dry etching and stripping possible with pure oxygen plasma

Applications

Fabrication of nanopatterns by pattern transfer for e.g.

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
     

mr-I 9000M version *

Film thickness *

mr-I 9010M

100 nm

mr-I 9020M 200 nm
mr-I 9030M 300 nm
mr-I 9050M 500 nm
mr-I 9100M 1.0 µm

* Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
     
  • Available thinner: ma-T 1045
  • Resist stripping: oxygen plasma
  • Larger packing sizes available on request

mr-I 7000R series

Thermal Nanoimprint Lithography

T-NIL resist featuring low glass transition temperature (Tg = 55 °C) for low temperature imprints

Unique Features

  • Facilitated stamp separation due to integrated fluorinated additive
  • 100% organic thermoplast → dry etching and stripping possible with pure oxygen plasma
  • Polymer soluble in aceton and other common solvents → easy cleaning
     

Applications

Fabrication of nanopatterns by pattern transfer for e.g

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
  • Microfluidics, bio applications
  • Single layer lift-off
     
Parameter mr-I 7000R mr-I 8000R
Glass transition temperature Tg 55 °C 115 °C
Imprint temperature 120 °C - 140 °C 150 °C - 180 °C
Imprint pressure 20 - 40 bar 20 - 40 bar
Ready-to-use solutions for standard film thicknesses * (3000 rpm)

mr-I 7010R 100nm

mr-I 7020R 200nm

mr-I 7030R 300nm

mr-I 8010R 100nm

mr-I 8020R 200nm

mr-I 8030R 300nm

Resist thinner ma-T 1050 ma-T 1050
Resist stripping ma-T 1050, aceton, org. solvents or oxygen plasma ma-T 1050, aceton, org. solvents or oxygen plasma

* Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
  • Larger packing sizes available on request