mr-NIL210 series

Photo-Nanoimprint Lithography

mr-NIL210 is a purely organic, photo-curable NIL resist with oustanding dry etch characteristics.  It features an excellent curing and nanoimprint performance and is particularly suitable for soft-NIL using soft stamp materials, e.g. PDMS.

Unique Features

  • Excellent curing properties, even under air (presence of oxygen)
  • Compatibility to PDMS working stamps for soft-NIL, preferably applied in combination with UV-PDMS KER-4690 
  • Outstanding dry etch stability against various substrates like silicon, quartz, or aluminum
  • Purely organic resist, residue-free removable with oxygen plasma possible after curing

Applications

  • Etch mask for pattern transfer processes (dry and wet etching)
  • Fabrication of nanostructures for
    • LEDs, photonic crystals
    • Patterned sapphire substrates (PSS)
    • Microelectronics
    • Organic electronics (OLED, OPV, OTFT)
    • Data storage (bit patterned media)
    • Lift-off applications in combination with  e.g. LOR (MCC, USA)

 Recommended process parameters

Process step

Process parameter

Spin coating

3000 rpm for 30 s

Prebake

100 °C for 60 s

Imprint temperature

Room temperature

Imprint pressure

> 100 mbar

Radiation intensity

mr-NIL210-100nm: 100 mW cm-2
mr-NIL210-200nm: 50 mW cm-2
mr-NIL210-500nm: 50 mW cm-2

Radiation source

Option 1: broad band
Option 2: LED (365-405 nm)

Thinner

ma-T 1078

Primer

mr-APS1

 Our available standard film thicknesses

mr-NIL210 version

Film thickness @3000 rpm*

mr-NIL210-100nm

100 nm

mr-NIL210-200nm

200 nm

mr-NIL210-500nm

500 nm

* Customized film thickness available on request up to 2 µm

This NIL resist series is available in the following quantities:

  • 100 ml
  • 250 ml
  • 500 ml
  • Larger bottle sizes available on request

mr-NIL 6000E series

Combined thermal- and Photo-Nanoimprint Lithography

mr-NIL 6000E is a photo-curable thermoplastic NIL resist featuring excellent pattern stability after imprinting and radiation in subsequent processes with a thermal load

Unique Features

  • Excellent thermal structure stability in subsequent processes due to the photochemically induced crosslinking reaction during imprinting
  • 100% organic NIL resist → dry etching and stripping possible with pure oxygen plasma

Applications

  • Fabrication of nanopatterns by pattern transfer for e.g.
  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
     

mr-NIL 6000E version

Film thickness *

mr-NIL 6000.1E

100 nm

mr-NIL 6000.2E 200 nm
mr-NIL 6000.3E 300 nm

* Further film thicknesses available on request

Our NIL polymers are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

mr-I 9000M series

Thermal Nanoimprint Lithography

Thermally curable NIL resist (Thermoset - no Tg after imprinting)

Unique Features

  • Excellent thermal structure stability (up to 250 °C in a two-step imprinting process) in subsequent processes due to the thermally induced crosslinking reaction during imprinting
  • 100% organic resist → dry etching and stripping possible with pure oxygen plasma

Applications

Fabrication of nanopatterns by pattern transfer for e.g.

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
     

mr-I 9000M version *

Film thickness *

mr-I 9010M

100 nm

mr-I 9020M 200 nm
mr-I 9030M 300 nm
mr-I 9050M 500 nm
mr-I 9100M 1.0 µm

* Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
     
  • Available thinner: ma-T 1045
  • Resist stripping: oxygen plasma
  • Larger packing sizes available on request

SIPOL series

Thermal Nanoimprint Lithography

T-NIL resist (Tg = 63 °C) with a 10% content of covalently bonded Silicon acting as an etch mask in a bilayer approach for the realization of very high aspect ratio patterns after subsequent dry etch processes

Unique Features

Material deposition on top of underlayer UL1 using spin-coating technique

  • High oxygen plasma resistance due to a Si content of 10 %
  • Good stamp release characteristics give rise to a low defectivity rate

Applications

  • Fabrication of micro/nano-scale patterns with high aspect ratios >> 3
  • Patterned sapphire substrates (PSS) for fabrication of high brightness LEDs
  • Micro/nanopillars for nanofluidic devices, e.g. DNA electrophoresis
  • Fabrication of photonic crystals

Our available products with standard film thickness

SIPOL version* SIPOL film thickness *
SIPOL-100nm 100nm
SIPOL-200nm 200nm

* Customized film thickness available on request  

Recommended processing parameters

Process step Process parameter
Spin-coating 3000 rpm for 30 s
Softbake conditions 100 °C for 2 min
Imprint temperature 100-130 °C
Imprint pressure 10-30 bar
Imprint time 1-5 min

Stamp release temperature

20-50 °C
Resist thinner ma-T 1050
Resist stripping ma-T 1050, aceton, org. solvents

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
  • Larger packing sizes available on request