mr-PosEBR series

E-Beam Lithography

Positive resists for e-beam lithography

Unique Features

  • Highly sensitive
  • High resolution capability (< 50 nm)
  • Excellent dry etch resistance
  • Development in organic solvents 

Applications

  • Etch mask   

Resist

Film tickness @ 3000 rpm

mr-PosEBR 0.05

50 nm

mr-PosEBR 0.1

100 nm

mr-PosEBR 0.3

300 nm

Our positive photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)

mr-UVCur26SF

Photo-Nanoimprint Lithography

mr-UVCur26SF is a pure organic and solvent-free Photo-NIL resist developed for inkjet dispensing. The low viscosity and the fast photo-curing reaction makes mr-UVCur26SF suitable for continuous roll-to-roll NIL processes.

Unique Features

  • Inkjet dispensing at room temperature due to low viscosity (15 mPas), e.g. for step-and-repeat NIL processes
  • No prebake after substrate coating due to solvent-free resist formulation
  • Very fast curing for high throughput R2R-NIL, web speed up to 30 m/min shown
  • Good adhesion to PC and PET substrates
  • Excellent dry etch stability for pattern transfer processes
  • Residue-free removable with oxygen plasma

Applications

  • Etch mask for pattern transfer processes (dry and wet etching)
  • Application of  nanostructures on polymer foils
  • Fabrication of nanostructures for
    • Nano-optical devices, SOEs
    • Organic electronics (OLED, OPV, OTFT)
    • Microelectronics
    • LEDs, photonic crystals

 Process parameters for inkjet dispensing

Process step

Process parameter

Inkjet parameter

Piezo actuated printhead, dispensing possible at room temperature

Prebake

Not necessary (solvent-free)

Imprint temperature

Room temperature

Imprint pressure

> 100 mbar

Radiation dose

> 500 mJ cm-2 (λ =  320 – 420 nm)

Thinner

Not recommended

Primer

mr-APS1 (e.g. for Si)

 Process parameters for roll-to-roll NIL

Process step

Process parameter

Resist application method

Gravure printing, inkjet dispensing, etc.

Prebake

Not necessary (solvent-free)

Web speed

Depending on and limited by tool setup and light source, up to 30 m/min shown so far

Imprint temperature

Room temperature

Imprint pressure

Depending on roller imprinter

Radiation dose

> 500 mJ cm-2 (λ =  320 – 420 nm)

Thinner

Not recommended

Primer

Not necessary (good adhesion to PC, PET, etc.)

mr-UVCur26SF is available in the following quantities:

  • 100 ml
  • 250 ml
  • 500 ml
  • 1000 ml
  • Larger packing sizes available on request

mr-NIL210 series

Photo-Nanoimprint Lithography

mr-NIL210 is a purely organic, photo-curable NIL resist with oustanding dry etch characteristics.  It features an excellent curing and nanoimprint performance and is particularly suitable for soft-NIL using soft stamp materials, e.g. PDMS.

Unique Features

  • Excellent curing properties, even under air (presence of oxygen)
  • Compatibility to PDMS working stamps for soft-NIL, preferably applied in combination with UV-PDMS KER-4690 
  • Outstanding dry etch stability against various substrates like silicon, quartz, or aluminum
  • Purely organic resist, residue-free removable with oxygen plasma possible after curing

Applications

  • Etch mask for pattern transfer processes (dry and wet etching)
  • Fabrication of nanostructures for
    • LEDs, photonic crystals
    • Patterned sapphire substrates (PSS)
    • Microelectronics
    • Organic electronics (OLED, OPV, OTFT)
    • Data storage (bit patterned media)
    • Lift-off applications in combination with  e.g. LOR (MCC, USA)

 Recommended process parameters

Process step

Process parameter

Spin coating

3000 rpm for 30 s

Prebake

100 °C for 60 s

Imprint temperature

Room temperature

Imprint pressure

> 100 mbar

Radiation intensity

mr-NIL210-100nm: 100 mW cm-2
mr-NIL210-200nm: 50 mW cm-2
mr-NIL210-500nm: 50 mW cm-2

Radiation source

Option 1: broad band
Option 2: LED (365-405 nm)

Thinner

ma-T 1078

Primer

mr-APS1

 Our available standard film thicknesses

mr-NIL210 version

Film thickness @3000 rpm*

mr-NIL210-100nm

100 nm

mr-NIL210-200nm

200 nm

mr-NIL210-500nm

500 nm

* Customized film thickness available on request up to 2 µm

This NIL resist series is available in the following quantities:

  • 100 ml
  • 250 ml
  • 500 ml
  • Larger bottle sizes available on request

UV-curable liquid silicone rubber / UV-PDMS

Herstellung Polymerer Arbeitsstempel

Distribution for european markets now

micro resist technology GmbH is providing a new selection of UV-curable liquid silicone rubber / UV-PDMS (OEM:Shin-Etsu) for European markets. The UV-PDMS can be used in a wide range of applications, but in particular for the manufacture of soft-molds in replication technologies such as nanoimprint lithography.

Main advantages by using the new Shin-Etsu UV-PDMS over generic PDMS:

  • Spin-coating for enhanced mold fabrication
  • Faster curing time (e.g. 10 min after UV exposure)
  • High resolution capabilities down 100 nm and smaller
  • 0.02% shrinkage for superb pattern fidelity
     

There are two different types of UV-PDMS available. The following table provides the general material characteristics of the two different types of UV-PDMS:

General material characteristics of the new UV-PDMS (OEM:Shin-Etsu)

 

KER-4690

(X-34-4184)

KER-4691

(X-34-4208)

Appearance
(Color Tone)

Colorless

Milky-white

Appearance
(Transparency)

Transparent

Semi-
transparent

Viscosity
[Pa・s]

2.7

110

Hardness:
Durometer
type-A

55

42

Elongation
at Break [%]

110

400

Tensile Strength
[MPa]

7.7

7.0

Tear Propagation
Strength (crescent)
[kN/m]

3.0

17.1

Linear
Contraction [%]

<0.1

<0.1

Curing Rate*
[Min]

20

45

Curing Condition
[mJ/cm2]

2000

2000

* TA Instruments ARES-G2, 25℃, 1Hz

Each system consists of two components. After thoroughly mixing the two-component material system (A/B) in equal volume, the liquid mixture compounds can be processed for up to 24 hours by casting, spin-coating or other deposition methods. Due to the photo-sensitivity, the cross-linking (or curing) is initiated by UV-exposure. In contrast to generic PDMS, this allows almost full curing already at room temperature and significantly increases the curing speed (by factor of 100 and more). Furthermore, without the need of an additional thermal curing one can achieve a minimized shrinkage of 0.02%.

 

For detailed information on material properties and process specifications, please get in contact with the product manager NIL polymers Dr. Manuel Thesen (m.thesen@microresist.de). In case of inquiry request or purchase order, please contact our sales assistant Mrs. Anja Hinz (a.hinz@microresist.de).

 

The Shin-Etsu UV-PDMS are available in the following package sizes:

50 g / 50 g (UV-PDMS KER-4690-A/B)

500 g / 500 g (UV-PDMS KER-4690-A/B and KER-4691-A/B)

mr-UVCur21 series

Photo-Nanoimprint Lithography

mr-UVCur21 is a photo-curable NIL resist with excellent dry etching stability

Unique Features

  • Low-viscosity photo-NIL formulation, fast filling of stamp cavities
  • Fast curing at low UV dose and short imprint cycle times
  • Residue-free removal by oxygen plasma etching

Applications

Fabrication of nanostructures

  • Microelectronics
  • Data storage (BPM)
  • Nano-optical devices
  • Photonic crystals
  • Mask for pattern transfer processes (dry and wet etching)
  • Lift off applications in combination with e.g. LOR (from MCC, USA)
     

mr-UVCur21 version

Film thickness *

mr-UVCur21-100nm

100 nm

mr-UVCur21-200nm

200 nm

mr-UVCur21-300nm

300 nm

mr-UVCur21SF

1.7 µm

* Further film thicknesses available on request

Our NIL polymers are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

mr-NIL 6000E series

Combined thermal- and Photo-Nanoimprint Lithography

mr-NIL 6000E is a photo-curable thermoplastic NIL resist featuring excellent pattern stability after imprinting and radiation in subsequent processes with a thermal load

Unique Features

  • Excellent thermal structure stability in subsequent processes due to the photochemically induced crosslinking reaction during imprinting
  • 100% organic NIL resist → dry etching and stripping possible with pure oxygen plasma

Applications

  • Fabrication of nanopatterns by pattern transfer for e.g.
  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
     

mr-NIL 6000E version

Film thickness *

mr-NIL 6000.1E

100 nm

mr-NIL 6000.2E 200 nm
mr-NIL 6000.3E 300 nm

* Further film thicknesses available on request

Our NIL polymers are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

mr-I 9000M series

Thermal Nanoimprint Lithography

Thermally curable NIL resist (Thermoset - no Tg after imprinting)

Unique Features

  • Excellent thermal structure stability (up to 250 °C in a two-step imprinting process) in subsequent processes due to the thermally induced crosslinking reaction during imprinting
  • 100% organic resist → dry etching and stripping possible with pure oxygen plasma

Applications

Fabrication of nanopatterns by pattern transfer for e.g.

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
     

mr-I 9000M version *

Film thickness *

mr-I 9010M

100 nm

mr-I 9020M 200 nm
mr-I 9030M 300 nm
mr-I 9050M 500 nm
mr-I 9100M 1.0 µm

* Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
     
  • Available thinner: ma-T 1045
  • Resist stripping: oxygen plasma
  • Larger packing sizes available on request

ma-N 2400 & mr-EBL 6000 series

E-Beam/ Deep UV Lithography

Conventional pattern transfer processes

Unique Features ma-N 2400 series for e-beam and deep UV lithography

  • High resolution capability (~ 40 - 50 nm)
  • Aqueous alkaline development
  • Good thermal stability of the resist patterns
  • High wet and dry etch resistance
  • Easy to remove

Unique Features mr-EBL 6000 series for e-beam lithography

  • Excellent thermal stability of the resist patterns
  • High wet and dry etch resistance
  • High resolution capability (~ 40 - 50 nm)
  • Post exposure bake (PEB) required

Applications

  • Mask for etching

ma-N 2400

Resist

Film thickness @ 3000 rpm

ma-N 2401

0.1 µm 

ma-N 2403

0.3 µm 

ma-N 2405

0.5 µm 

ma-N 2410

1.0 µm 

mr-EBL 6000

Resist

Film thickness @ 3000 rpm

mr-EBL 6000.1

0.1 µm 

mr-EBL 6000.3

0.3 µm 

mr-EBL 6000.5

0.5 µm 

Our negative photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

HMDS Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)