ma-N 400 & ma-N 1400 series

UV lithography (broadband and i line exposure)

Single layer lift-off application, conventional pattern transfer processes

Unique Features

  • Tunable pattern profile: vertical to undercut
  • Good thermal stability of the resist pattern
  • High wet and dry etch resistance
  • Aqueous alkaline development
  • Easy to remove

ma-N 400: Thermal stability up to 110°C for metal evaporation

ma-N 1400: Thermal stability up to 160°C for metal evaporation and sputtering

Application

  • Mask for lift-off processes
  • Etch mask for semiconductors and metals
  • Mask for ion implantation

ma-N 400

Resist Film thickness @ 3000 rpm
ma-N 405    0.5 µm
ma-N 415 1.5 µm
ma-N 420 2.0 µm
ma-N 440    4.1 µm
ma-N 490   7.5 µm

 ma-N 1400

Resist    Film thickness @ 3000 rpm
ma-N 1405 0.5 µm
ma-N 1407    0.7 µm
ma-N 1410    1.0 µm
ma-N 1420 2.0 µm
ma-N 1440 4.0 µm

Our negative photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)

mr-NIL210 series

Photo-Nanoimprint Lithography

mr-NIL210 is a purely organic, photo-curable NIL resist with oustanding dry etch characteristics.  It features an excellent curing and nanoimprint performance and is particularly suitable for soft-NIL using soft stamp materials, e.g. PDMS.

Unique Features

  • Excellent curing properties, even under air (presence of oxygen)
  • Compatibility to PDMS working stamps for soft-NIL, preferably applied in combination with UV-PDMS KER-4690 
  • Outstanding dry etch stability against various substrates like silicon, quartz, or aluminum
  • Purely organic resist, residue-free removable with oxygen plasma possible after curing

Applications

  • Etch mask for pattern transfer processes (dry and wet etching)
  • Fabrication of nanostructures for
    • LEDs, photonic crystals
    • Patterned sapphire substrates (PSS)
    • Microelectronics
    • Organic electronics (OLED, OPV, OTFT)
    • Data storage (bit patterned media)
    • Lift-off applications in combination with  e.g. LOR (MCC, USA)

 Recommended process parameters

Process step

Process parameter

Spin coating

3000 rpm for 30 s

Prebake

100 °C for 60 s

Imprint temperature

Room temperature

Imprint pressure

> 100 mbar

Radiation intensity

mr-NIL210-100nm: 100 mW cm-2
mr-NIL210-200nm: 50 mW cm-2
mr-NIL210-500nm: 50 mW cm-2

Radiation source

Option 1: broad band
Option 2: LED (365-405 nm)

Thinner

ma-T 1078

Primer

mr-APS1

 Our available standard film thicknesses

mr-NIL210 version

Film thickness @3000 rpm*

mr-NIL210-100nm

100 nm

mr-NIL210-200nm

200 nm

mr-NIL210-500nm

500 nm

* Customized film thickness available on request up to 2 µm

This NIL resist series is available in the following quantities:

  • 100 ml
  • 250 ml
  • 500 ml
  • Larger bottle sizes available on request

UV-curable liquid silicone rubber / UV-PDMS

Herstellung Polymerer Arbeitsstempel

Distribution for european markets now

micro resist technology GmbH is providing a new selection of UV-curable liquid silicone rubber / UV-PDMS (OEM:Shin-Etsu) for European markets. The UV-PDMS can be used in a wide range of applications, but in particular for the manufacture of soft-molds in replication technologies such as nanoimprint lithography.

Main advantages by using the new Shin-Etsu UV-PDMS over generic PDMS:

  • Spin-coating for enhanced mold fabrication
  • Faster curing time (e.g. 10 min after UV exposure)
  • High resolution capabilities down 100 nm and smaller
  • 0.02% shrinkage for superb pattern fidelity
     

There are two different types of UV-PDMS available. The following table provides the general material characteristics of the two different types of UV-PDMS:

General material characteristics of the new UV-PDMS (OEM:Shin-Etsu)

 

KER-4690

(X-34-4184)

KER-4691

(X-34-4208)

Appearance
(Color Tone)

Colorless

Milky-white

Appearance
(Transparency)

Transparent

Semi-
transparent

Viscosity
[Pa・s]

2.7

110

Hardness:
Durometer
type-A

55

42

Elongation
at Break [%]

110

400

Tensile Strength
[MPa]

7.7

7.0

Tear Propagation
Strength (crescent)
[kN/m]

3.0

17.1

Linear
Contraction [%]

<0.1

<0.1

Curing Rate*
[Min]

20

45

Curing Condition
[mJ/cm2]

2000

2000

* TA Instruments ARES-G2, 25℃, 1Hz

Each system consists of two components. After thoroughly mixing the two-component material system (A/B) in equal volume, the liquid mixture compounds can be processed for up to 24 hours by casting, spin-coating or other deposition methods. Due to the photo-sensitivity, the cross-linking (or curing) is initiated by UV-exposure. In contrast to generic PDMS, this allows almost full curing already at room temperature and significantly increases the curing speed (by factor of 100 and more). Furthermore, without the need of an additional thermal curing one can achieve a minimized shrinkage of 0.02%.

 

For detailed information on material properties and process specifications, please get in contact with the product manager NIL polymers Dr. Manuel Thesen (m.thesen@microresist.de). In case of inquiry request or purchase order, please contact our sales assistant Mrs. Anja Hinz (a.hinz@microresist.de).

 

The Shin-Etsu UV-PDMS are available in the following package sizes:

50 g / 50 g (UV-PDMS KER-4690-A/B)

500 g / 500 g (UV-PDMS KER-4690-A/B and KER-4691-A/B)

mr-NIL 6000E series

Combined thermal- and Photo-Nanoimprint Lithography

mr-NIL 6000E is a photo-curable thermoplastic NIL resist featuring excellent pattern stability after imprinting and radiation in subsequent processes with a thermal load

Unique Features

  • Excellent thermal structure stability in subsequent processes due to the photochemically induced crosslinking reaction during imprinting
  • 100% organic NIL resist → dry etching and stripping possible with pure oxygen plasma

Applications

  • Fabrication of nanopatterns by pattern transfer for e.g.
  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
     

mr-NIL 6000E version

Film thickness *

mr-NIL 6000.1E

100 nm

mr-NIL 6000.2E 200 nm
mr-NIL 6000.3E 300 nm

* Further film thicknesses available on request

Our NIL polymers are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

mr-I 9000M series

Thermal Nanoimprint Lithography

Thermally curable NIL resist (Thermoset - no Tg after imprinting)

Unique Features

  • Excellent thermal structure stability (up to 250 °C in a two-step imprinting process) in subsequent processes due to the thermally induced crosslinking reaction during imprinting
  • 100% organic resist → dry etching and stripping possible with pure oxygen plasma

Applications

Fabrication of nanopatterns by pattern transfer for e.g.

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
     

mr-I 9000M version *

Film thickness *

mr-I 9010M

100 nm

mr-I 9020M 200 nm
mr-I 9030M 300 nm
mr-I 9050M 500 nm
mr-I 9100M 1.0 µm

* Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
     
  • Available thinner: ma-T 1045
  • Resist stripping: oxygen plasma
  • Larger packing sizes available on request

SIPOL series

Thermal Nanoimprint Lithography

T-NIL resist (Tg = 63 °C) with a 10% content of covalently bonded Silicon acting as an etch mask in a bilayer approach for the realization of very high aspect ratio patterns after subsequent dry etch processes

Unique Features

Material deposition on top of underlayer UL1 using spin-coating technique

  • High oxygen plasma resistance due to a Si content of 10 %
  • Good stamp release characteristics give rise to a low defectivity rate

Applications

  • Fabrication of micro/nano-scale patterns with high aspect ratios >> 3
  • Patterned sapphire substrates (PSS) for fabrication of high brightness LEDs
  • Micro/nanopillars for nanofluidic devices, e.g. DNA electrophoresis
  • Fabrication of photonic crystals

Our available products with standard film thickness

SIPOL version* SIPOL film thickness *
SIPOL-100nm 100nm
SIPOL-200nm 200nm

* Customized film thickness available on request  

Recommended processing parameters

Process step Process parameter
Spin-coating 3000 rpm for 30 s
Softbake conditions 100 °C for 2 min
Imprint temperature 100-130 °C
Imprint pressure 10-30 bar
Imprint time 1-5 min

Stamp release temperature

20-50 °C
Resist thinner ma-T 1050
Resist stripping ma-T 1050, aceton, org. solvents

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
  • Larger packing sizes available on request

mr-I 8000R series

Thermal Nanoimprint Lithography

T-NIL resist featuring higher glass transition temperature (Tg = 115 °C) for increased pattern stability in subsequent processes

Unique Features

  • Facilitated stamp separation due to integrated fluorinated additive
  • 100% organic thermoplast → dry etching and stripping possible with pure oxygen plasma
  • Polymer soluble in aceton and other common solvents → easy cleaning

Applications

Fabrication of nanopatterns by pattern transfer for e.g.

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
  • Microfluidics, bio applications
  • Single layer lift-off
     
Parameter mr-I 7000R mr-I 8000R
Glass transition temperature Tg 50 °C 105 °C
Imprint temperature 120 °C - 140 °C 150 °C - 180 °C
Imprint pressure 20 - 40 bar 20 - 40 bar
Ready-to-use solutions for standard film thicknesses * (3000 U/min)

mr-I 7010R 100nm

mr-I 7020R 200nm

mr-I 7030R 300nm

mr-I 8010R 100nm

mr-I 8020R 200nm

mr-I 8030R 300nm

Resist thinner ma-T 1050 ma-T 1050
Resist stripping ma-T 1050, aceton, org. solvents or oxygen plasma ma-T 1050, aceton, org. solvents or oxygen plasma

 * Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
  • Larger packing sizes available on request

mr-I 7000R series

Thermal Nanoimprint Lithography

T-NIL resist featuring low glass transition temperature (Tg = 55 °C) for low temperature imprints

Unique Features

  • Facilitated stamp separation due to integrated fluorinated additive
  • 100% organic thermoplast → dry etching and stripping possible with pure oxygen plasma
  • Polymer soluble in aceton and other common solvents → easy cleaning
     

Applications

Fabrication of nanopatterns by pattern transfer for e.g

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
  • Microfluidics, bio applications
  • Single layer lift-off
     
Parameter mr-I 7000R mr-I 8000R
Glass transition temperature Tg 55 °C 115 °C
Imprint temperature 120 °C - 140 °C 150 °C - 180 °C
Imprint pressure 20 - 40 bar 20 - 40 bar
Ready-to-use solutions for standard film thicknesses * (3000 rpm)

mr-I 7010R 100nm

mr-I 7020R 200nm

mr-I 7030R 300nm

mr-I 8010R 100nm

mr-I 8020R 200nm

mr-I 8030R 300nm

Resist thinner ma-T 1050 ma-T 1050
Resist stripping ma-T 1050, aceton, org. solvents or oxygen plasma ma-T 1050, aceton, org. solvents or oxygen plasma

* Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
  • Larger packing sizes available on request

ma-P 1200

UV Lithography

ma-P 1200 is a positive tone photoresist series designed for the use in microelectronics and microsystems technology. The resists are available in a variety of viscosities for film thicknesses of 0.3 – 40 μm in one spin-coating step

Unique Features

  • Broadband, g-, h- and i-line exposure
  • Very good pattern stability in wet etch processes and acid and alkaline plating baths
  • Highly stable in dry etch processes e.g. CHF3, CF4, SF6
  • Aqueous alkaline development 

Applications

  • Mask for etching e.g.Si, SiO2, other semiconductors, metals
  • Mask for ion implantation
  • Mould for electroplating
     
Resist

Film thickness @ 3000 rpm

ma-P 1205

0.5 µm

ma-P 1210

1.0 µm

ma-P 1215

1.5 µm

ma-P 1225

2.5 µm

ma-P 1240

4.0 µm

ma-P 1275

7.5 µm

Our positive photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

HMDS Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)