mr-DWL series

Laser direct writing @ 405 nm

Permanent application and conventional pattern transfer processes

Unique Features

  • Sensitive above 400 nm, for direct writing laser @ 405 nm
  • High thermal and chemical stability
  • High wet and dry etch stability 

Applications

  • Fast and contactless prototyping by
  • Permanent: Master/ template manufacture, mould for PDMS
  • Pattern transfer: Etch mask, mould for electroplating
     

Resist

Film tickness

mr-DWL 5

5.0 µm @ 3000 rpm

mr-DWL 40

40 µm @ 2000 rpm

mr-DWL 100 100 µm @ 1500 rpm

Our negative photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)

ma-P 1275, ma-P 1275HV

UV Lithography

ma-P 1275 and ma-P 1275HV are high viscosity positive tone photoresists for film thicknesses of up to 60 μm

Unique Features

  • Broadband, g-, h- and i-line exposure
  • High stability in acid and alkaline plating baths
  • High dry and wet etch resistance
  • Good thermal stability of the resist patterns attainable
  • Aqueous alkaline development
  • Side wall angle up to 87° with mask aligner broadband exposure
  • Suitable for pattern reflow

Applications

  • Mould for electroplating – e.g. for micro coils, micro springs
  • Fabrication of micro optical components – e.g. microlenses by pattern transfer from reflowed resist patterns
  • Etch mask for metal and semiconductor substrates
  • Mask for ion implantation
     
Resist

Film thickness @ 3000 rpm

ma-P 1275

7.5 µm

ma-P 1275HV

11.0 µm

Our positive photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

HMDS Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)

ma-P 1200

UV Lithography

ma-P 1200 is a positive tone photoresist series designed for the use in microelectronics and microsystems technology. The resists are available in a variety of viscosities for film thicknesses of 0.3 – 40 μm in one spin-coating step

Unique Features

  • Broadband, g-, h- and i-line exposure
  • Very good pattern stability in wet etch processes and acid and alkaline plating baths
  • Highly stable in dry etch processes e.g. CHF3, CF4, SF6
  • Aqueous alkaline development 

Applications

  • Mask for etching e.g.Si, SiO2, other semiconductors, metals
  • Mask for ion implantation
  • Mould for electroplating
     
Resist

Film thickness @ 3000 rpm

ma-P 1205

0.5 µm

ma-P 1210

1.0 µm

ma-P 1215

1.5 µm

ma-P 1225

2.5 µm

ma-P 1240

4.0 µm

ma-P 1275

7.5 µm

Our positive photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

HMDS Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)