mr-PosEBR series

E-Beam Lithography

Positive resists for e-beam lithography

Unique Features

  • Highly sensitive
  • High resolution capability (< 50 nm)
  • Excellent dry etch resistance
  • Development in organic solvents 

Applications

  • Etch mask   

Resist

Film tickness @ 3000 rpm

mr-PosEBR 0.05

50 nm

mr-PosEBR 0.1

100 nm

mr-PosEBR 0.3

300 nm

Our positive photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)

ma-N 2400 & mr-EBL 6000 series

E-Beam/ Deep UV Lithography

Conventional pattern transfer processes

Unique Features ma-N 2400 series for e-beam and deep UV lithography

  • High resolution capability (~ 40 - 50 nm)
  • Aqueous alkaline development
  • Good thermal stability of the resist patterns
  • High wet and dry etch resistance
  • Easy to remove

Unique Features mr-EBL 6000 series for e-beam lithography

  • Excellent thermal stability of the resist patterns
  • High wet and dry etch resistance
  • High resolution capability (~ 40 - 50 nm)
  • Post exposure bake (PEB) required

Applications

  • Mask for etching

ma-N 2400

Resist

Film thickness @ 3000 rpm

ma-N 2401

0.1 µm 

ma-N 2403

0.3 µm 

ma-N 2405

0.5 µm 

ma-N 2410

1.0 µm 

mr-EBL 6000

Resist

Film thickness @ 3000 rpm

mr-EBL 6000.1

0.1 µm 

mr-EBL 6000.3

0.3 µm 

mr-EBL 6000.5

0.5 µm 

Our negative photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

HMDS Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)