mr-PosEBR series

E-Beam Lithography

Positive resists for e-beam lithography

Unique Features

  • Highly sensitive
  • High resolution capability (< 50 nm)
  • Excellent dry etch resistance
  • Development in organic solvents 

Applications

  • Etch mask   

Resist

Film tickness @ 3000 rpm

mr-PosEBR 0.05

50 nm

mr-PosEBR 0.1

100 nm

mr-PosEBR 0.3

300 nm

Our positive photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)

ma-N 400 & ma-N 1400 series

UV lithography (broadband and i line exposure)

Single layer lift-off application, conventional pattern transfer processes

Unique Features

  • Tunable pattern profile: vertical to undercut
  • Good thermal stability of the resist pattern
  • High wet and dry etch resistance
  • Aqueous alkaline development
  • Easy to remove

ma-N 400: Thermal stability up to 110°C for metal evaporation

ma-N 1400: Thermal stability up to 160°C for metal evaporation and sputtering

Application

  • Mask for lift-off processes
  • Etch mask for semiconductors and metals
  • Mask for ion implantation

ma-N 400

Resist Film thickness @ 3000 rpm
ma-N 405    0.5 µm
ma-N 415 1.5 µm
ma-N 420 2.0 µm
ma-N 440    4.1 µm
ma-N 490   7.5 µm

 ma-N 1400

Resist    Film thickness @ 3000 rpm
ma-N 1405 0.5 µm
ma-N 1407    0.7 µm
ma-N 1410    1.0 µm
ma-N 1420 2.0 µm
ma-N 1440 4.0 µm

Our negative photoresists are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

Developer and Remover: • 1.0 l • 2.5 l • 5.0 l (Ancillaries)

Primer: • 100 ml • 0.25 l • 0.5 l • 1.0 l (Ancillaries)

Thinner: • 0.5 l • 1.0 l (Ancillaries)

mr-UVCur26SF

Photo-Nanoimprint Lithography

mr-UVCur26SF is a pure organic and solvent-free Photo-NIL resist developed for inkjet dispensing. The low viscosity and the fast photo-curing reaction makes mr-UVCur26SF suitable for continuous roll-to-roll NIL processes.

Unique Features

  • Inkjet dispensing at room temperature due to low viscosity (15 mPas), e.g. for step-and-repeat NIL processes
  • No prebake after substrate coating due to solvent-free resist formulation
  • Very fast curing for high throughput R2R-NIL, web speed up to 30 m/min shown
  • Good adhesion to PC and PET substrates
  • Excellent dry etch stability for pattern transfer processes
  • Residue-free removable with oxygen plasma

Applications

  • Etch mask for pattern transfer processes (dry and wet etching)
  • Application of  nanostructures on polymer foils
  • Fabrication of nanostructures for
    • Nano-optical devices, SOEs
    • Organic electronics (OLED, OPV, OTFT)
    • Microelectronics
    • LEDs, photonic crystals

 Process parameters for inkjet dispensing

Process step

Process parameter

Inkjet parameter

Piezo actuated printhead, dispensing possible at room temperature

Prebake

Not necessary (solvent-free)

Imprint temperature

Room temperature

Imprint pressure

> 100 mbar

Radiation dose

> 500 mJ cm-2 (λ =  320 – 420 nm)

Thinner

Not recommended

Primer

mr-APS1 (e.g. for Si)

 Process parameters for roll-to-roll NIL

Process step

Process parameter

Resist application method

Gravure printing, inkjet dispensing, etc.

Prebake

Not necessary (solvent-free)

Web speed

Depending on and limited by tool setup and light source, up to 30 m/min shown so far

Imprint temperature

Room temperature

Imprint pressure

Depending on roller imprinter

Radiation dose

> 500 mJ cm-2 (λ =  320 – 420 nm)

Thinner

Not recommended

Primer

Not necessary (good adhesion to PC, PET, etc.)

mr-UVCur26SF is available in the following quantities:

  • 100 ml
  • 250 ml
  • 500 ml
  • 1000 ml
  • Larger packing sizes available on request

mr-NIL210 series

Photo-Nanoimprint Lithography

mr-NIL210 is a purely organic, photo-curable NIL resist with oustanding dry etch characteristics.  It features an excellent curing and nanoimprint performance and is particularly suitable for soft-NIL using soft stamp materials, e.g. PDMS.

Unique Features

  • Excellent curing properties, even under air (presence of oxygen)
  • Compatibility to PDMS working stamps for soft-NIL, preferably applied in combination with UV-PDMS KER-4690 
  • Outstanding dry etch stability against various substrates like silicon, quartz, or aluminum
  • Purely organic resist, residue-free removable with oxygen plasma possible after curing

Applications

  • Etch mask for pattern transfer processes (dry and wet etching)
  • Fabrication of nanostructures for
    • LEDs, photonic crystals
    • Patterned sapphire substrates (PSS)
    • Microelectronics
    • Organic electronics (OLED, OPV, OTFT)
    • Data storage (bit patterned media)
    • Lift-off applications in combination with  e.g. LOR (MCC, USA)

 Recommended process parameters

Process step

Process parameter

Spin coating

3000 rpm for 30 s

Prebake

60 °C for 180 s

Imprint temperature

Room temperature

Imprint pressure

> 100 mbar

Radiation intensity

mr-NIL210-100nm: 100 mW cm-2
mr-NIL210-200nm: 50 mW cm-2
mr-NIL210-500nm: 50 mW cm-2

Radiation source

Option 1: broad band
Option 2: LED (365-405 nm)

Thinner

ma-T 1078

Primer

mr-APS1

 Our available standard film thicknesses

mr-NIL210 version

Film thickness @3000 rpm*

mr-NIL210-100nm

100 nm

mr-NIL210-200nm

200 nm

mr-NIL210-500nm

500 nm

* Customized film thickness available on request up to 2 µm

This NIL resist series is available in the following quantities:

  • 100 ml
  • 250 ml
  • 500 ml
  • Larger bottle sizes available on request

mr-UVCur21 series

Photo-Nanoimprint Lithography

mr-UVCur21 is a photo-curable NIL resist with excellent dry etching stability

Unique Features

  • Low-viscosity photo-NIL formulation, fast filling of stamp cavities
  • Fast curing at low UV dose and short imprint cycle times
  • Residue-free removal by oxygen plasma etching

Applications

Fabrication of nanostructures

  • Microelectronics
  • Data storage (BPM)
  • Nano-optical devices
  • Photonic crystals
  • Mask for pattern transfer processes (dry and wet etching)
  • Lift off applications in combination with e.g. LOR (from MCC, USA)
     

mr-UVCur21 version

Film thickness *

mr-UVCur21-100nm

100 nm

mr-UVCur21-200nm

200 nm

mr-UVCur21-300nm

300 nm

mr-UVCur21SF

1.7 µm

* Further film thicknesses available on request

Our NIL polymers are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

mr-NIL 6000E series

Combined thermal- and Photo-Nanoimprint Lithography

mr-NIL 6000E is a photo-curable thermoplastic NIL resist featuring excellent pattern stability after imprinting and radiation in subsequent processes with a thermal load

Unique Features

  • Excellent thermal structure stability in subsequent processes due to the photochemically induced crosslinking reaction during imprinting
  • 100% organic NIL resist → dry etching and stripping possible with pure oxygen plasma

Applications

  • Fabrication of nanopatterns by pattern transfer for e.g.
  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
     

mr-NIL 6000E version

Film thickness *

mr-NIL 6000.1E

100 nm

mr-NIL 6000.2E 200 nm
mr-NIL 6000.3E 300 nm

* Further film thicknesses available on request

Our NIL polymers are available in the following filling sizes:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)

mr-I 9000M series

Thermal Nanoimprint Lithography

Thermally curable NIL resist (Thermoset - no Tg after imprinting)

Unique Features

  • Excellent thermal structure stability (up to 250 °C in a two-step imprinting process) in subsequent processes due to the thermally induced crosslinking reaction during imprinting
  • 100% organic resist → dry etching and stripping possible with pure oxygen plasma

Applications

Fabrication of nanopatterns by pattern transfer for e.g.

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
     

mr-I 9000M version *

Film thickness *

mr-I 9010M

100 nm

mr-I 9020M 200 nm
mr-I 9030M 300 nm
mr-I 9050M 500 nm
mr-I 9100M 1.0 µm

* Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
     
  • Available thinner: ma-T 1045
  • Resist stripping: oxygen plasma
  • Larger packing sizes available on request

mr-I T85 series

Thermal Nanoimprint Lithography

T-NIL resist (Tg = 85 °C) based on non-polar cyclo-olefin-copolymers (TOPAS)

Unique Features

  • Film thickness of up to 5 µm possible for the fabrication of microfluidic or lab-on-chip devices
  • 100% organic thermoplast → dry etching and stripping possible with pure oxygen plasma
  • featuring the highest optical transparency in the range of UV/vis and distinctive chemical stability against e.g. different solvents, acids, and bases

Applications

Lab-on-chip systems

  • Bio applications
  • Microfluidics
  • Microoptical elements
  • Wave guides
  • Single and multilayer systems
  • Mask for pattern transfer processes
     
Material characteristics and imprint parameters mr-I T85
Glass transition temperature 85 °C
Imprint temperature 130 – 150 °C
Imprint pressure 5 – 20 bar
Ready-to-use solutions for various film thicknesses (3000 rpm) *

mr-I T85-0.3 300 nm

mr-I T85-1.0 1.0 µm

mr-I T85-5.0 5.0 µm

* Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
  • Larger packing sizes available on request

mr-I 8000R series

Thermal Nanoimprint Lithography

T-NIL resist featuring higher glass transition temperature (Tg = 115 °C) for increased pattern stability in subsequent processes

Unique Features

  • Facilitated stamp separation due to integrated fluorinated additive
  • 100% organic thermoplast → dry etching and stripping possible with pure oxygen plasma
  • Polymer soluble in aceton and other common solvents → easy cleaning

Applications

Fabrication of nanopatterns by pattern transfer for e.g.

  • High brightness LEDs
  • Photonic crystals
  • Patterned media
  • Nano-optical devices, subwavelength optical elements
  • Microfluidics, bio applications
  • Single layer lift-off
     
Parameter mr-I 7000R mr-I 8000R
Glass transition temperature Tg 50 °C 105 °C
Imprint temperature 120 °C - 140 °C 150 °C - 180 °C
Imprint pressure 20 - 40 bar 20 - 40 bar
Ready-to-use solutions for standard film thicknesses * (3000 U/min)

mr-I 7010R 100nm

mr-I 7020R 200nm

mr-I 7030R 300nm

mr-I 8010R 100nm

mr-I 8020R 200nm

mr-I 8030R 300nm

Resist thinner ma-T 1050 ma-T 1050
Resist stripping ma-T 1050, aceton, org. solvents or oxygen plasma ma-T 1050, aceton, org. solvents or oxygen plasma

 * Customized film thickness available on request

This NIL resist series is available in the following quantities:

  • 0.25 l
  • 0.5 l
  • 1.0 l
  • 2.5 l
  • 100 ml as sample on request (extra charge for small quantities)
  • Larger packing sizes available on request