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micro resist technology GmbH
Positive Tone Photoresist Series
Currently available products
Product parameter - Overview
| Resist | Thickness (3000 rpm, 30 s) |
Resolution | Wavelength |
|---|---|---|---|
| ma-P 1205 | 0.5 µm | 1.0 µm | Broadband g-linie: 436 nm i-linie: 365 nm |
| ma-P 1210 | 1.0 µm | 1.0 µm | Broadband g-linie: 436 nm i-linie: 365 nm |
| ma-P 1215 | 1.5 µm | 1.25 µm | Broadband g-linie: 436 nm i-linie: 365 nm |
| ma-P 1225 | 2.5 µm | 1.5 µm | Broadband g-linie: 436 nm i-linie: 365 nm |
| ma-P 1240 | 4.0 µm | 1.75 µm | Broadband g-linie: 436 nm i-linie: 365 nm |
| ma-P 1275 | 7.5 µm | 3.0 µm | Broadband g-linie: 436 nm i-linie: 365 nm |
| ma-P 1275 | 30 µm (350 rpm/60 s) |
10.0 µm | Broadband g-linie: 436 nm i-linie: 365 nm |
| ma-P 1275 HV | 11 µm | 4.0 µm | Broadband g-linie: 436 nm i-linie: 365 nm |
| ma-P 1275 HV | 30 µm (700 rpm/60 s) |
10.0 µm | Broadband g-linie: 436 nm i-linie: 365 nm |
| ma-P 1275 HV | 50 µm (400 rpm/60 s) |
20.0 µm | Broadband g-linie: 436 nm i-linie: 365 nm |
other thicknesses on demand
Ancilleries
| Resist Series | Developer | Thinner | Remover |
|---|---|---|---|
| ma-P 1200 | ma-D 331 ma-D 531* |
ma-T 1050 | mr-Rem 660 ma-R 404S** |
| ma-P 1275/ ma-P 1275 HV |
ma-D 331/ ma-D 531* 2.38 % TMAH |
ma-T 1050 | mr-Rem 660 ma-R 404S** |
* metall-ion free ** strongly alkaline
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