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    Products »
    micro resist technology GmbH

     Positive Tone Photoresist Series


    Currently available products


    Product parameter - Overview

    Resist Thickness
    (3000 rpm, 30 s)
    Resolution Wavelength
    ma-P 1205 0.5 µm 1.0 µm Broadband
    g-linie: 436 nm
    i-linie: 365 nm
    ma-P 1210 1.0 µm 1.0 µm Broadband
    g-linie: 436 nm
    i-linie: 365 nm
    ma-P 1215 1.5 µm 1.25 µm Broadband
    g-linie: 436 nm
    i-linie: 365 nm
    ma-P 1225 2.5 µm 1.5 µm Broadband
    g-linie: 436 nm
    i-linie: 365 nm
    ma-P 1240 4.0 µm 1.75 µm Broadband
    g-linie: 436 nm
    i-linie: 365 nm
    ma-P 1275 7.5 µm 3.0 µm Broadband
    g-linie: 436 nm
    i-linie: 365 nm
    ma-P 1275 30 µm
    (350 rpm/60 s)
    10.0 µm Broadband
    g-linie: 436 nm
    i-linie: 365 nm
    ma-P 1275 HV 11 µm 4.0 µm Broadband
    g-linie: 436 nm
    i-linie: 365 nm
    ma-P 1275 HV 30 µm
    (700 rpm/60 s)
    10.0 µm Broadband
    g-linie: 436 nm
    i-linie: 365 nm
    ma-P 1275 HV 50 µm
    (400 rpm/60 s)
    20.0 µm Broadband
    g-linie: 436 nm
    i-linie: 365 nm

    other thicknesses on demand


    Ancilleries

    Resist Series Developer Thinner Remover
    ma-P 1200 ma-D 331
    ma-D 531*
    ma-T 1050 mr-Rem 660
    ma-R 404S**
    ma-P 1275/
    ma-P 1275 HV
    ma-D 331/
    ma-D 531*
    2.38 % TMAH
    ma-T 1050 mr-Rem 660
    ma-R 404S**

    * metall-ion free ** strongly alkaline


    print version ›››    print version