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micro resist technology GmbH

Currently available products

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The resist series ma-N 400 and ma-N 1400 differ in the obtainable film thickness range, the sensitivity, the thermal stability of the resist patterns and in the profile of the formed undercut patterns.

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Product parameter - Overview

Resist	Thickness (3000 rpm, 30 s)	Resolution	Wavelegth
ma-N 405	0.5 µm	1.0 µm	Broadband i-linie: 365 nm
ma-N 415	1.5 µm	1.5 µm	Broadband i-linie: 365 nm
ma-N 420	2.0 µm	1.5 µm	Broadband i-linie: 365 nm
ma-N 440	4.0 µm	2.0 µm	Broadband i-linie: 365 nm
ma-N 490	7.5 µm	4.0 µm	Broadband i-linie: 365 nm
ma-N 1405	0.5 µm	1.0 µm	Broadband i-linie: 365 nm
ma-N 1407	0.7 µm	1.0 µm	Broadband i-linie: 365 nm
ma-N 1410	1.0 µm	1.5 µm	Broadband i-linie: 365 nm
ma-N 1420	2.0 µm	1.5 µm	Broadband i-linie: 365 nm
ma-N 1440	4.0 µm	3.0 µm	Broadband i-linie: 365 nm
ma-N 2401	0.1 µm	0.2 µm (DUV) 50 nm (e-beam)	248 / 254 nm E-Beam
ma-N 2403	0.3 µm	0.2 µm (DUV) 50 nm (e-beam)	248 / 254 nm E-Beam
ma-N 2405	0.5 µm	0.3 µm (DUV) 100 nm (e-beam)	248 / 254 nm E-Beam
ma-N 2410	1.0 µm	0.5µm (DUV) 150 nm (e-beam)	248 / 254 nm E-Beam
EpoCore	50 µm (1500 rpm, 60 s) 10 µm - 60 µm (1000 - 5000 rpm)	Aspect ratio 5	Broadband i-Linie: 365 nm
EpoClad	70 µm (1500 rpm, 60 s) 10 µm - 100 µm (1000 - 5000 rpm)	Aspect ratio 1	Broadband i-Linie: 365 nm

other thicknesses on demand

ancilleries

Resist Series	Developer	Thinner	Remover
ma-N 400	ma-D 332S ma-D 331S for (ma-N 405 - NaOH based)	mr-T 1049	mr-Rem 660 mr-Rem 400 NMP frei ma-R 404S**
ma-N 1400	ma-D 533S* - TMAH based	ma-T 1046	mr-Rem 660 mr-Rem 400 NMP frei ma-R 404S**
ma-N 2400	ma-D 525*/ ma-D 332 ma-D 331 for (ma-N 2401)	mr-T 1090	mr-Rem 660 mr-Rem 400 NMP frei ma-R 404S**
EpoCore Refractive index @ 830 nm	mr-Dev 600***	-	mr-Rem 500 mr-Rem 660 O2-plasma
EpoClad Refractive index @ 830 nm	ma-D 532***	-	mr-Rem 500 mr-Rem 660 O2-plasma

* metal-ion free** strongly alkaline*** solvent based

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