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    Products»
    micro resist technology GmbH

     Negativ Tone Photoresist Series      » ma-N 2400 «

    Currently available products


    Details of product   » ma-N 2400 «

    Negativ Tone Photoresist Series is well suited for E-Beam- and Low-UV-Lithography

    Unique features


  • High wet and dry etch resistance
  • Good thermal stability
  • Excellent pattern resolution - down to 30 nm
  • Aqueous alkaline development
  • Easy to remove
  • Resists available in a variety of viscosities
  • Applications


  • Manufacturing of semiconductor devices
  • Use in micro- and nanoelectronics
  • Mask for etching, e.g.
    Si, SiO2, Si3N4 or metals
  • Mask for ion implantation
  • Stamp fabrication for NIL

  • Process flow



    Examples

    ma-N 2400

    chess board, 300 nm
    thickness, E-Beam

    50 nm Dots, 100 nm
    thickness, E-Beam

    50 nm L&S, 100 nm
    thickness, E-Beam


    print version ›››    print version