ma-N 2400 and mr-EBL 6000


ma-N 2400 and mr-EBL 6000 – two e-beam sensitive resist series differing in their sensitivity and thermal stability. Both series are designed for the use in micro- and nano electronics especially as a mask for pattern transfer in dry and wet etch processes [1-6]. Patterns down to 50 nm can be attained.

ma-N 2400


Is an easy-to-handle non-chemically amplified negative resist series with a broad process window concerning exposure and development (no delay time issue). It is developed in aqueous alkaline solutions and easily removed after pattern transfer.

mr-EBL 6000


Is a high sensitive resist series exhibiting excellent thermal stability.

When applying these resists on insulating substrates (e.g. quartz) top-coating of a water soluble conductive polymer layer prevents undesired surface charging effects [7,8].

  • [1] S. C. Chen et al “Parameter optimization for an ICP deep silicon etching system“ Microsyst. Technol. (2007) 13, 465–474

  • [2] M.M. Blideran et al “Improving etch selectivity and stability of novolak based negative resists by fluorine plasma treatment” Microelectronic Engineering 86 (2009) 769–772

  • [3] L. Zhou et al “Towards A thermal Optically-Interconnected Computing System using Slotted Silicon Microring Resonators and RF-Photonic Comb Generation ” Appl Phys A (2009) 95, 1101–1109

  • [4] J. Cardenas et al “Low loss etchless silicon photonic waveguides” OPTICS EXPRESS (2009) Vol. 17, No. 6, 4752

  • [5] H. Elsner et al “Evaluation of the ma-N 2400 series DUV photoresists for the electron beam exposure” Microelectron. Eng. 46 (1999), 389–392

  • [6] B. Bilenberg et al “Comparison of high resolution negative electron beam resists” J. Vac. Sci. Technol. B 24, 4 (2006), 1776 - 1779

  • [7] Ji et al “High-Throughput Nanohole Array Based System to Monitor Multiple Binding Events in Real Time” Anal. Chem. 2008, 80, 2491-2498

  • [8] K. Mohamed et al “Surface charging suppression using PEDOT/PSS in the fabrication of three dimensional structures on a quartz substrate” Microelectronic Engineering Vol. 86, Iss 4-6 (2009) 535 - 538”
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    ma-n 2400 structure02
    mr-ebl 6000 structur01
    ma-N 2400 50 nm lines/ spaces, 100 nm film thickness
    mr-EBL 6000 80 nm dots, film thickness 100 nm

    All pictures - Courtesy of HHI Berlin